A hybrid tandem solar cell based on hydrogenated amorphous silicon and dye-sensitized TiO2 film

2012 ◽  
Vol 520 (6) ◽  
pp. 2102-2105 ◽  
Author(s):  
Sancun Hao ◽  
Jihuai Wu ◽  
Zhonglin Sun
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Tio2 Film ◽  
Hydrogenated Amorphous Silicon ◽  
Tandem Solar Cell ◽  
Dye Sensitized ◽  
Hydrogenated Amorphous

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Improved Stability of Hydrogenated Amorphous Silicon Solar Cells Fabricated by Triode-Plasma CVD

2005 ◽  
Vol 862 ◽  
Author(s):  
H. Sonobe ◽  
A. Sato ◽  
T. Fujibayashi ◽  
S. Shimizu ◽  
T. Matsui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Plasma Cvd ◽  
Plate Electrode ◽  
Bond Density ◽  
Degradation Ratio ◽  
Improved Stability ◽  
Hydrogenated Amorphous

AbstractWe have employed a triode-type plasma CVD system to fabricate highly stabilized hydrogenated amorphous silicon (a-Si:H) solar cells. The p-i-n type solar cells were fabricated on a textured SnO2/glass substrate (ASAHI VU type). By applying a triode system, the Si-H2 bond density in the film decreased to about one third (from 1.7 at.% for conventional parallel-plate-electrode to 0.6 at.% for a triode configuration), and correspondingly the degradation ratio decreased from 13 % to 10 %. We have achieved the degradation ratio of 5 % by optimizing the player deposition conditions. In case of a triode system, there were minor effects of higher hydrogen dilution in the stabilized efficiency. We have experimented the effects of the substrate temperature for a higher stabilized efficiency. Further improvement in solar efficiency has been made by applying antireflection layers to air/glass and TCO/p interfaces. As a result, we have achieved the stabilized efficiency of 9.22 % (Jsc = 15.9 mA/cm2, Voc = 0.863 V, FF = 0.672) with a degradation ratio of 7.8 %. We have also employed the triode-deposited a-Si:H solar cell to a tandem type solar cell with a structure of a-Si:H/hydrogenated microcrystalline silicon (μc-Si:H). We have achieved the stabilized efficiency of 10.9 % (Jsc = 12.0 mA/cm2, Voc = 1.31 V, FF = 0.691) with a degradation ratio of 7.3 %.

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