Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model

2011 ◽  
Vol 520 (1) ◽  
pp. 400-403 ◽  
Author(s):  
Xiaoyan Liu ◽  
Yuling Liu ◽  
Yan Liang ◽  
Haixiao Liu ◽  
Zhiwen Zhao ◽  
...  
2005 ◽  
Vol 483 (1-2) ◽  
pp. 239-244 ◽  
Author(s):  
Ping Hsun Chen ◽  
Bing Wei Huang ◽  
Han Chang Shih

2002 ◽  
Vol 149 (2) ◽  
pp. G118 ◽  
Author(s):  
Christopher L. Borst ◽  
Dipto G. Thakurta ◽  
William N. Gill ◽  
Ronald J. Gutmann

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.


Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  

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