Defect passivation by O2 plasma treatment on high-k dielectric HfO2 films at room temperature

2011 ◽  
Vol 519 (15) ◽  
pp. 5110-5113 ◽  
Author(s):  
Kou-Chen Liu ◽  
Jung-Ruey Tsai ◽  
Wen-Kai Lin ◽  
Chi-Shiau Li ◽  
Jyun-Ning Chen
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
High K ◽  
Defect Passivation ◽  
O2 Plasma Treatment ◽  
High K Dielectric ◽  
O2 Plasma

Effects of O2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs

2007 ◽  
Author(s):  
Kyong Taek Lee ◽  
Chang Yong Kang ◽  
Rino Choi ◽  
Seung Chul Song ◽  
Byoung Hun Lee ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Metal Gate ◽  
High K ◽  
O2 Plasma Treatment ◽  
High K Dielectric ◽  
O2 Plasma

scholarly journals Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au–Au Bonding Using Ultrathin Au Films

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 119 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Surface Energy ◽  
Plasma Treatment ◽  
Bonding Strength ◽  
Room Temperature ◽  
Activation Mechanism ◽  
Spectroscopy Analysis ◽  
Wafer Scale ◽  
O2 Plasma Treatment ◽  
Ar Plasma ◽  
O2 Plasma

Au–Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O2 plasma for pretreatment was investigated for room-temperature wafer-scale Au–Au bonding using ultrathin Au films (<50 nm) in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Destructive razor blade testing revealed that the bonding strength of samples obtained using Ar plasma treatment was higher than the strength of bulk Si (surface energy of bulk Si: 2.5 J/m2), while that of samples obtained using O2 plasma treatment was low (surface energy: 0.1–0.2 J/m2). X-ray photoelectron spectroscopy analysis revealed that a gold oxide (Au2O3) layer readily formed with O2 plasma treatment, and this layer impeded Au–Au bonding. Thermal desorption spectroscopy analysis revealed that Au2O3 thermally desorbed around 110 °C. Annealing of O2 plasma-treated samples up to 150 °C before bonding increased the bonding strength from 0.1 to 2.5 J/m2 due to Au2O3 decomposition.

Influence of O2 plasma treatment on NiO x layer in perovskite solar cells

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FS07 ◽  
Author(s):  
Yoshihiko Nishihara ◽  
Masayuki Chikamatsu ◽  
Said Kazaoui ◽  
Tetsuhiko Miyadera ◽  
Yuji Yoshida
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
Perovskite Solar Cells ◽  
O2 Plasma Treatment ◽  
O2 Plasma

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k &gt; 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

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