Room temperature O2 plasma treatment of SiO2 supported Au catalysts for selective hydrogenation of acetylene in the presence of large excess of ethylene

2012 ◽  
Vol 285 (1) ◽  
pp. 152-159 ◽  
Author(s):  
Xiaoyan Liu ◽  
Chung-Yuan Mou ◽  
Szetsen Lee ◽  
Yanan Li ◽  
Jeremiah Secrest ◽  
...  
2011 ◽  
Vol 519 (15) ◽  
pp. 5110-5113 ◽  
Author(s):  
Kou-Chen Liu ◽  
Jung-Ruey Tsai ◽  
Wen-Kai Lin ◽  
Chi-Shiau Li ◽  
Jyun-Ning Chen

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 119 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  

Au–Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O2 plasma for pretreatment was investigated for room-temperature wafer-scale Au–Au bonding using ultrathin Au films (<50 nm) in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Destructive razor blade testing revealed that the bonding strength of samples obtained using Ar plasma treatment was higher than the strength of bulk Si (surface energy of bulk Si: 2.5 J/m2), while that of samples obtained using O2 plasma treatment was low (surface energy: 0.1–0.2 J/m2). X-ray photoelectron spectroscopy analysis revealed that a gold oxide (Au2O3) layer readily formed with O2 plasma treatment, and this layer impeded Au–Au bonding. Thermal desorption spectroscopy analysis revealed that Au2O3 thermally desorbed around 110 °C. Annealing of O2 plasma-treated samples up to 150 °C before bonding increased the bonding strength from 0.1 to 2.5 J/m2 due to Au2O3 decomposition.


2018 ◽  
Vol 57 (4S) ◽  
pp. 04FS07 ◽  
Author(s):  
Yoshihiko Nishihara ◽  
Masayuki Chikamatsu ◽  
Said Kazaoui ◽  
Tetsuhiko Miyadera ◽  
Yuji Yoshida

2019 ◽  
Vol 111 (8) ◽  
pp. 1184-1190
Author(s):  
Md Ali Hossain ◽  
Weiguo Chen ◽  
Jinhuan Zheng ◽  
Ya Zhang ◽  
Chenglong Wang ◽  
...  

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