Epitaxial growth of non-polar a-plane AlN films by low temperature sputtering using ZnO buffer layers

2011 ◽  
Vol 519 (15) ◽  
pp. 5090-5094 ◽  
Author(s):  
Hou-Guang Chen ◽  
Sheng-Rui Jian ◽  
Hui-Ling Kao ◽  
Meei-Ru Chen ◽  
Gou-Zhi Huang
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Buffer Layers

Optimization of SI-Wafer Cleaning and the use of Buffer-Layers for Epitaxial Growth of Sige-Layers by VLPCVD at T = 650 C

1992 ◽  
Vol 259 ◽  
Author(s):  
Matty R. Caymax ◽  
J. Poortmans ◽  
A. Van Ammel ◽  
W. Vandervorst ◽  
J. Vanhellemont ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Oxide Layer ◽  
Layer Growth ◽  
Buffer Layers ◽  
Ex Situ ◽  
Wafer Cleaning ◽  
Dry Etch ◽  
Water Rinse ◽  
Si Wafer

ABSTRACTFor low-temperature epi-growth in UHV-CVD-systems, the pre-epi, ex-situ cleaning of Si-wafers is known to be very critical. Various ways of etching the chemical oxide-layer after RCA-cleaning have been analysed by SIMS-measurements of the interfacial C, 0 and Bcontamination. Layer growth was performed at 650 C under a flow of 20 sccm of silane at 0.26 Pa. The best results (C and 0 below 2 % of a monolayer, and no detectable amounts of B) were obtained with “dry” etch-procedures, i.e. in which no water-rinse was applied after a normal 2 % HF-dip, or where 1F-vapour was used instead. Growth of Si1-xGex-layers with x < 0.1 succeeds quite well on such prepared substrates; for x between 0.1 and 0.25, we have found the use of a thin, pure Si-buffer layer (150 Å) to be indispensable. For x > 0.25, the growing layer can become quite rough, although this varies in time.

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

2019 ◽  
Vol 16 (1) ◽  
pp. 9-13
Author(s):  
Takahiro Tsukamoto ◽  
Nobumitsu Hirose ◽  
Akifumi Kasamatsu ◽  
Toshiaki Matsui ◽  
Yoshiyuki Suda
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Segregation ◽  
Buffer Layers

Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers

2012 ◽  
Vol 258 (12) ◽  
pp. 5073-5079 ◽  
Author(s):  
Seung Wook Shin ◽  
G.L. Agawane ◽  
In Young Kim ◽  
Ye Bin Kwon ◽  
In Ok Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Doped Zno

(Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers

2013 ◽  
Vol 50 (9) ◽  
pp. 613-621 ◽  
Author(s):  
G. Kozlowski ◽  
O. Fursenko ◽  
P. Zaumseil ◽  
T. Schroeder ◽  
M. Vorderwestner ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Wafers ◽  
Buffer Layers ◽  
New Materials

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical

Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb

1994 ◽  
Vol 143 (1-2) ◽  
pp. 15-21 ◽  
Author(s):  
J. Shin ◽  
A. Verma ◽  
G.B. Stringfellow ◽  
R.W. Gedridge
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth
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