Deposition and characterization of pulsed direct current magnetron sputtered Al95.5Cr2.5Si2 (N1−xOx) thin films

2010 ◽  
Vol 519 (1) ◽  
pp. 319-324 ◽  
Author(s):  
H. Najafi ◽  
A. Shetty ◽  
A. Karimi ◽  
M. Morstein
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Pulsed Direct Current

Characterization of iridium oxide thin films deposited by pulsed-direct-current reactive sputtering

2007 ◽  
Vol 515 (18) ◽  
pp. 7059-7065 ◽  
Author(s):  
Sachin Thanawala ◽  
Daniel G. Georgiev ◽  
Ronald J. Baird ◽  
Gregory Auner
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Reactive Sputtering ◽  
Iridium Oxide ◽  
Oxide Thin Films ◽  
Pulsed Direct Current

Deposition and Characterization of Cuprous Oxide Thin Films by Direct Current Magnetron Sputtering

2015 ◽  
Vol 7 (11) ◽  
pp. 990-994
Author(s):  
V. Vignesh ◽  
R. Niveditha ◽  
R. Nirmala ◽  
R.T. Rajendrakumar ◽  
R. Navamathavan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Cuprous Oxide ◽  
Oxide Thin Films ◽  
Direct Current Magnetron Sputtering

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

2013 ◽  
Vol 734-737 ◽  
pp. 2559-2562
Author(s):  
Ying Zhen Li ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Peng Juan Liu ◽  
Qing Yun Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Antimonide ◽  
Β Phase ◽  
Bk7 Glass ◽  
Diffraction Peaks

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing.

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