Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator

2007 ◽  
Vol 515 (11) ◽  
pp. 4819-4825 ◽  
Author(s):  
Kuan-Hsun Chiu ◽  
Jiann-Heng Chen ◽  
Hong-Ren Chen ◽  
Ruey-Shing Huang
Keyword(s):  
Thin Films ◽  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Bulk Acoustic Wave ◽  
Reactive Magnetron ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

scholarly journals The thin film bulk acoustic wave resonator based on single-crystalline 43○Y-cut lithium niobate thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075002
Author(s):  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
Lu Lv ◽  
Ying Xing ◽  
Jiaoling Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lithium Niobate ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Single Crystalline ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

Stress Adjustment and Characteristics Improvement in a 1.8GHz Range Film Bulk Acoustic Wave Resonator by Using Multi-layer Structure of ZnO/A12O3/SiO2

2002 ◽  
Vol 741 ◽  
Author(s):  
Masaki Takeuchi ◽  
Hajime Yamada ◽  
Hideki Kawamura ◽  
Yoshihiko Goto ◽  
Tadashi Nomura ◽  
...  
Keyword(s):  
Thin Films ◽  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Layer Structure ◽  
Fem Simulation ◽  
Bulk Acoustic Wave ◽  
Positive Temperature ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

ABSTRACTStress adjustment and improvement of electrical characteristics in film bulk acoustic wave resonator (BAW) have been successfully carried out in 1.8GHz range by using a multi-layer structure of ZnO / Al2O3 / SiO2. The BAW resonator, designed on secondary harmonics at about 1.8GHz, has Al / ZnO / Al / Al2O3 / SiO2 structure. ZnO and SiO2 thin films have a negative and a positive temperature coefficient of sound velocity, respectively. So temperature coefficient of frequency (TCF) of the BAW resonator can be controlled by the thickness ratio of ZnO and SiO2 thin films. Since both ZnO and SiO2 have compressive stress, and Al2O3 has tensile one, the stress of the membrane is reduced by combining these thin films so that the membrane can avoid deformation. The BAW resonator, with thickness of ZnO / Al2O3 / SiO2=1.2 /0.45/1.25 microns, was designed by finite element method (FEM) simulation and fabricated. The value of quality factor (Q factor) and the TCF of the BAW resonator were realized over 1000 and −20 ppm/degree C, respectively. The Q of ZnO / Al2O3 / SiO2 structure was higher than that of ZnO / SiO2 one with keeping small TCF.

Piezoelectric Properties of Aluminum Nitride for Thin Film Bulk Acoustic Wave Resonator

2005 ◽  
Vol 47 (92) ◽  
pp. 309 ◽  
Author(s):  
Nam Kuangwoo ◽  
Park Yunkwon ◽  
Ha Byeoungju ◽  
Shim Dongha ◽  
Song Insang ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Piezoelectric Properties ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk
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