Piezoelectric Properties of Aluminum Nitride for Thin Film Bulk Acoustic Wave Resonator

2005 ◽  
Vol 47 (92) ◽  
pp. 309 ◽  
Author(s):  
Nam Kuangwoo ◽  
Park Yunkwon ◽  
Ha Byeoungju ◽  
Shim Dongha ◽  
Song Insang ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Piezoelectric Properties ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

scholarly journals The thin film bulk acoustic wave resonator based on single-crystalline 43○Y-cut lithium niobate thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075002
Author(s):  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
Lu Lv ◽  
Ying Xing ◽  
Jiaoling Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lithium Niobate ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Single Crystalline ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

Simulation and fabrication of thin film bulk acoustic wave resonator

2016 ◽  
Vol 37 (7) ◽  
pp. 074009
Author(s):  
Xixi Han ◽  
Yi Ou ◽  
Zhigang Li ◽  
Wen Ou ◽  
Dapeng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

Thin film bulk acoustic wave resonator (TFBAR) gas sensor

2005 ◽  
Author(s):  
M. Benetti ◽  
D. Cannat ◽  
A. D'Amico ◽  
F. Di Pietrantonio ◽  
V. Foglietti ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Gas Sensor ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

scholarly journals Extraction of lateral eigenmode properties in thin film bulk acoustic wave resonator from interferometric measurements

2010 ◽  
Vol 96 (17) ◽  
pp. 173502 ◽  
Author(s):  
Kimmo Kokkonen ◽  
Tuomas Pensala ◽  
Johanna Meltaus ◽  
Matti Kaivola
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

The Improvement of Temperature Coefficient of Frequency in Thin Film Bulk Acoustic Wave Resonator using Secondary Harmonics

2002 ◽  
Vol 741 ◽  
Author(s):  
Yukio Yoshino ◽  
Masaki Takeuchi ◽  
Hajime Yamada ◽  
Yoshihiko Goto ◽  
Tadashi Nomura ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Finite Element Method Simulation ◽  
Thickness Ratio ◽  
Bulk Acoustic Wave ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk ◽  
Temperature Coefficient Of Frequency

ABSTRACTWe have succeeded in making an 870MHz-range thin film bulk acoustic wave (BAW) resonator that has a small temperature coefficient of frequency (TCF) using secondary harmonics. The 870MHz-range BAW resonator has been requested to have nearly zero TCF, because it will be used in an oscillator for remote keyless entry systems. The BAW resonator has composite structure that consists of Al electrodes and ZnO/SiO2. We directed our attention to the fact that ZnO and Al have negative TCF, and SiO2 has a positive one. It is theoretically possible to make zero TCF BAW resonators by optimizing the thickness ratio of ZnO and SiO2. However, using fundamental resonance, TCF is so sensitive to the thickness ratio that it cannot be easily controlled by MEMS techniques. We founds in finite element method simulation and confirmed by experiment that the TCF of secondary harmonics has a local minimum when changing the ZnO/SiO2 thickness ratio. As the result, a nearly zero TCF resonator without strict control of ZnO/SiO2 thickness ratio has been realized by adopting Al/ZnO/SiO2/ZnO/Al/SiO2 structure and combining thermal oxidized Si and sputtered SiO2. The resonator has the TCF of -1.86ppm/degree in the range of −40 to 85 degrees centigrade.

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