Defect chemistry in CuGaS2 thin films: A photoluminescence study

2007 ◽  
Vol 515 (15) ◽  
pp. 6246-6251 ◽  
Author(s):  
J.R. Botha ◽  
M.S. Branch ◽  
P.R. Berndt ◽  
A.W.R. Leitch ◽  
J. Weber
Keyword(s):  
Thin Films ◽  
Defect Chemistry ◽  
Photoluminescence Study

Defect Chemistry of Oxide Nanomaterials with High Surface Area: Ordered Mesoporous Thin Films of the Oxygen Storage Catalyst CeO2–ZrO2

ACS Nano ◽  
2013 ◽  
Vol 7 (4) ◽  
pp. 2999-3013 ◽  
Author(s):  
Pascal Hartmann ◽  
Torsten Brezesinski ◽  
Joachim Sann ◽  
Andriy Lotnyk ◽  
Jens-Peter Eufinger ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Area ◽  
High Surface ◽  
High Surface Area ◽  
Defect Chemistry ◽  
Oxygen Storage ◽  
Ordered Mesoporous ◽  
Mesoporous Thin Films ◽  
Storage Catalyst

Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

2011 ◽  
Vol 21 ◽  
pp. 012015
Author(s):  
E Mammadov ◽  
M Haneta ◽  
H Toyota ◽  
N Uchitomi
Keyword(s):  
Thin Films ◽  
Photoluminescence Study

scholarly journals Photoluminescence study of ZnO:Al thin films with different power plasma

2019 ◽  
Vol 1321 ◽  
pp. 022009 ◽  
Author(s):  
B Astuti ◽  
Sugianto ◽  
I Maftuchah ◽  
N A Firmahaya ◽  
P Marwoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoluminescence Study

Time-resolved photoluminescence study of organic polysilane–silica hybrid thin films

2002 ◽  
Vol 299-302 ◽  
pp. 1052-1056 ◽  
Author(s):  
A. Kobayashi ◽  
H. Naito ◽  
Y. Matsuura ◽  
K. Matsukawa ◽  
S. Nihonyanagi ◽  
...  
Keyword(s):  
Thin Films ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Hybrid Thin Films ◽  
Time Resolved Photoluminescence ◽  
Silica Hybrid

scholarly journals Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3−δ thin films investigated by chemical capacitance measurements

2018 ◽  
Vol 20 (17) ◽  
pp. 12016-12026 ◽  
Author(s):  
Alexander Schmid ◽  
Ghislain M. Rupp ◽  
Jürgen Fleig
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Point Defects ◽  
Oxygen Vacancies ◽  
Defect Chemistry ◽  
Capacitance Measurements

Chemical capacitance measurements are used to study the defect chemistry of La0.6Sr0.4FeO3−δ thin films and their polarization (η) and pO2 dependence. Important point defects are oxygen vacancies (), electrons (e′) and holes (h˙).

Photoluminescence Study of Sexithiophene Thin Films

2005 ◽  
Vol 109 (11) ◽  
pp. 4829-4836 ◽  
Author(s):  
Anahita Mani ◽  
Joop Schoonman ◽  
Albert Goossens
Keyword(s):  
Thin Films ◽  
Photoluminescence Study

Photoluminescence study of laser ablated gallium nitride thin films

2002 ◽  
Author(s):  
Jerzy M. Wrobel ◽  
Ewa Placzek-Popko ◽  
Jan J. Dubowski ◽  
Haipeng Tang ◽  
James B. Webb
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Photoluminescence Study
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