scholarly journals Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3−δ thin films investigated by chemical capacitance measurements

2018 ◽  
Vol 20 (17) ◽  
pp. 12016-12026 ◽  
Author(s):  
Alexander Schmid ◽  
Ghislain M. Rupp ◽  
Jürgen Fleig
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Point Defects ◽  
Oxygen Vacancies ◽  
Defect Chemistry ◽  
Capacitance Measurements

Chemical capacitance measurements are used to study the defect chemistry of La0.6Sr0.4FeO3−δ thin films and their polarization (η) and pO2 dependence. Important point defects are oxygen vacancies (), electrons (e′) and holes (h˙).

Structural Characterization and Raman Studies of SrBi2Ta0.8Nb1.2O9 Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
S. Srinivas ◽  
R. R. Das ◽  
J. Mercoda ◽  
E. R. Fachini ◽  
W. Perez ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Growth Conditions ◽  
Oxygen Ions ◽  
Raman Modes ◽  
Deposited Films

AbstractThe effect of growth conditions such as substrate temperature and oxygen partial pressure on the microstructure and properties of pulsed laser deposited SBTN thin films on Si(100) and MgO(100) substrates have been studied. Crystallization of films begins at room temperature but, the obtained phase was non-ferroelectric. The influence of oxygen pressure (150 to 450 mTorr) on crystallinity of the films deposited on Si(100) at 750°C is negligible. XPS studies of as-deposited films reveal that the oxygen vacancies are preferably present near the Bi ions at the Bi2O2 layers and vary with substrate temperature and oxygen partial pressure. Also, XPS studies of Sr 3d core level for SBTN films suggest that the oxygen ions in the Sr(Ta/Nb)2O7 perovskite layers are much more stable than those in the Bi2O2 layers. Micro-Raman studies of SBTN films deposited below 700°C show Raman modes of a non -ferroelectric phase.

scholarly journals Effects of the thermal annealing on the thermoelectric properties of Ga-doped ZnO thin films

2019 ◽  
Vol 2 (4) ◽  
pp. 155-160
Author(s):  
Ngoc Hong Nguyen ◽  
Thu Nguyen Bao Le ◽  
Thang Bach Phan
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Photoluminescence ◽  
Zinc Interstitial ◽  
Doped Zno

We deposited successfully Ga-doped ZnO (GZO) thin films by using magnetron Dcsputtering technique, followed by annealing. The effects of the thermal annealing on thermoelectric properties of GZO films were investigated. The obtained results showed that due to annealing, the thermoelectric properties of the GZO films were significantly enhanced: (1) power factor increased with an increase of electron mobility due to high film crystallinity; (2) The figure of merit ZT values of the GZO film annealed at 500 oC (ZT = 0.114) was one order higher the asdeposited GZO film (ZT = 0.012). The room temperature photoluminescence (PL) spectra depicted various kinds of point defects which controlled thermoelectric properties and both oxygen vacancies VO and zinc interstitial Zni played an important role.

scholarly journals Correlating point defects with mechanical properties in nanocrystalline TiN thin films

2021 ◽  
pp. 109844
Author(s):  
Zaoli Zhang ◽  
Arsham Ghasemi ◽  
Nikola Koutná ◽  
Zhen Xu ◽  
Thomas Grünstäudl ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Point Defects ◽  
Tin Thin Films

scholarly journals Influence of Heterointerfaces on the Kinetics of Oxygen Surface Exchange on Epitaxial La1.85Sr0.15CuO4 Thin Films

2021 ◽  
Vol 11 (9) ◽  
pp. 3778
Author(s):  
Gene Yang ◽  
So-Yeun Kim ◽  
Changhee Sohn ◽  
Jong K. Keum ◽  
Dongkyu Lee
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Elevated Temperatures ◽  
Surface Exchange ◽  
Electrical Conductivity Relaxation ◽  
Exchange Kinetics ◽  
Relaxation Curves ◽  
Kinetics Of ◽  
Oxygen Surface Exchange ◽  
Oxygen Surface

Considerable attention has been directed to understanding the influence of heterointerfaces between Ruddlesden–Popper (RP) phases and ABO3 perovskites on the kinetics of oxygen electrocatalysis at elevated temperatures. Here, we report the effect of heterointerfaces on the oxygen surface exchange kinetics by employing heteroepitaxial oxide thin films formed by decorating LaNiO3 (LNO) on La1.85Sr0.15CuO4 (LSCO) thin films. Regardless of LNO decoration, tensile in-plane strain on LSCO films does not change. The oxygen surface exchange coefficients (kchem) of LSCO films extracted from electrical conductivity relaxation curves significantly increase with partial decorations of LNO, whereas full LNO coverage leads to the reduction in the kchem of LSCO films. The activation energy for oxygen exchange in LSCO films significantly decreases with partial LNO decorations in contrast with the full coverage of LNO. Optical spectroscopy reveals the increased oxygen vacancies in the partially covered LSCO films relative to the undecorated LSCO film. We attribute the enhanced oxygen surface exchange kinetics of LSCO to the increased oxygen vacancies by creating the heterointerface between LSCO and LNO.

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2
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