Photoluminescence study of laser ablated gallium nitride thin films

2002 ◽  
Author(s):  
Jerzy M. Wrobel ◽  
Ewa Placzek-Popko ◽  
Jan J. Dubowski ◽  
Haipeng Tang ◽  
James B. Webb
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Photoluminescence Study

scholarly journals Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Materials ◽  
2013 ◽  
Vol 6 (3) ◽  
pp. 1050-1060 ◽  
Author(s):  
Guillermo Santana ◽  
Osvaldo de Melo ◽  
Jorge Aguilar-Hernández ◽  
Rogelio Mendoza-Pérez ◽  
B. Monroy ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Vapor Transport ◽  
Photoluminescence Study

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

Space-charge-limited current flow in gallium nitride thin films

1974 ◽  
Vol 10 (2) ◽  
pp. 582-590 ◽  
Author(s):  
J. C. Vesely ◽  
M. Shatzkes ◽  
P. J. Burkhardt
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Space Charge ◽  
Current Flow ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

2011 ◽  
Author(s):  
R. Mendoza-Perez ◽  
G. Contreras-Puente ◽  
M. Lopez-Lopez ◽  
G. Santana-Rodrigez ◽  
J. Aguilar-Hernandez ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride

The Effect of Carrier Gas and Reactor Pressure on Gallium Nitride Growth in MOCVD Manufacturing Process

2019 ◽  
Vol 141 (8) ◽  
Author(s):  
Omar Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Gallium Nitride ◽  
Chemical Vapor ◽  
Wide Band ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Gas Mixture ◽  
Carrier Gas ◽  
Reactor Pressure

Gallium nitride (GaN) is an attractive material for manufacturing light emitting diodes and other electronic devices due to its wide band-gap and superb optoelectronic performance. The quality of GaN thin film determines the reliability and durability of these devices. Metal-organic chemical vapor deposition (MOCVD) is a common technique used to fabricate high-quality GaN thin films. In this paper, GaN growth rate and uniformity in a vertical rotating disk MOCVD reactor are investigated on the basis of a three-dimensional computational fluid dynamics (CFD) model. GaN growth rate is investigated under the influence of reactor pressure, precursor concentration ratio, and composition of the carrier gas mixture. The numerical simulation shows that the carrier gas mixture and the reactor pressure have significant effects on growth rate and uniformity of GaN thin films. It is also found that an appropriate mixture of N2 and H2 may be employed as the carrier gas to improve the flow field characteristic in the reactor. This results in an improved crystal growth of GaN thin films.

Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

2011 ◽  
Vol 21 ◽  
pp. 012015
Author(s):  
E Mammadov ◽  
M Haneta ◽  
H Toyota ◽  
N Uchitomi
Keyword(s):  
Thin Films ◽  
Photoluminescence Study
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