Thin Film Diamond Field Effect Transistors For High Power Applications

1997 ◽  
Vol 483 ◽  
Author(s):  
Hui Jin Looi ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
High Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Film Material ◽  
Near Surface ◽  
Suitable Material ◽  
P Type

AbstractEarly predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < l nA, no indication of reverse bias breakdown at 100V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of withstanding VDS values of 100V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W/mm, implying that thin film diamond may after all be an interesting material for power applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

1998 ◽  
Vol 7 (2-5) ◽  
pp. 565-568 ◽  
Author(s):  
H.J. Looi ◽  
L.Y.S. Pang ◽  
Y. Wang ◽  
M.D. Whitfield ◽  
R.B. Jackman
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Polycrystalline Diamond

Thin film field-effect transistors of 2,6-diphenyl anthracene (DPA)

2015 ◽  
Vol 51 (59) ◽  
pp. 11777-11779 ◽  
Author(s):  
Jie Liu ◽  
Huanli Dong ◽  
Zongrui Wang ◽  
Deyang Ji ◽  
Changli Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Design Synthesis

The present work showed the design, synthesis and characterization of a high performance anthracene-based semiconductor.

Biphenyl end-capped bithiazole co-oligomers for high performance organic thin film field effect transistors

2016 ◽  
Vol 52 (27) ◽  
pp. 4926-4929 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Thangavel Kanagasekaran ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

Two new regiospecific biphenyl end-capped bithiazole co-oligomers, BP2Tz(in) and BP2Tz(out), showed high hole mobilities of 3.5 and 0.4 cm2 V−1 s−1, respectively, in thin film field effect transistors.

Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors

2014 ◽  
Vol 23 (03n04) ◽  
pp. 1450023 ◽  
Author(s):  
Olivier Bonnaud ◽  
Peng Zhang ◽  
Emmanuel Jacques ◽  
Regis Rogel
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Substrate Surface ◽  
Vertical Channel ◽  
Electrical Behavior ◽  
Research Activities ◽  
P Type

In order to pursue the integration, the research activities were oriented during the last years towards channel conduction in a plan perpendicular to the substrate surface while in the traditional architectures the conduction is parallel to the surface, under the gate. In the integrated technologies, this approach led to the FinFET. But in this case, even though the conduction plan is perpendicular to the substrate surface, the direction of the drain currents remains parallel to the substrate. New electronics devices were designed with the channels vertically oriented. In the monolithic technologies, many drawbacks have stopped this trend. However, in the case of thin film technologies, the approach appeared more suitable. The channel conduction is thus vertically oriented. But a drawback comes from the leakage current flowing between source and drain. The introduction of an insulating barrier in-between and the decrease of the thickness of the channel active layer, led to electrical behavior much more suitable for applications. After an overview of the different approaches developed as well in monolithic technologies as in thin film technologies, this presentation will give details on the concept and on the fabrication process of quasi-vertical thin film transistors. The associated electrical results will be described, analyzed and commented.

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