Use of fluorescence to probe the surface dynamics during disorder-to-order transition and cluster formation in dihalonaphthalene–water thin films on Al2O3(0001)

2006 ◽  
Vol 515 (4) ◽  
pp. 1370-1376 ◽  
Author(s):  
M.A. Evans ◽  
D.R. Hoss ◽  
K.E. Howard ◽  
A.D. Louie ◽  
A.J. Bishop ◽  
...  
Keyword(s):  
Thin Films ◽  
Cluster Formation ◽  
Order Transition ◽  
Surface Dynamics

scholarly journals Intrinsic and Extrinsic Ferromagnetism in Co-Doped Indium Tin Oxide Revealed Using X-Ray Magnetic Circular Dichroism

2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
A. M. H. R. Hakimi ◽  
F. Schoofs ◽  
M. G. Blamire ◽  
S. Langridge ◽  
S. S. Dhesi
Keyword(s):  
Thin Films ◽  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Magnetic Circular Dichroism ◽  
Cluster Formation ◽  
X Ray ◽  
Ito Thin Films ◽  
Circular Dichroïsm ◽  
Co Doped

The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO) thin films have been investigated using X-ray diffraction (XRD), magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD). Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.

Cluster formation in amorphous and polycrystalline thin films

1981 ◽  
Vol 79 (1) ◽  
pp. 21-26 ◽  
Author(s):  
S.V. Krishnaswamy ◽  
R. Messier ◽  
S.B. McLane ◽  
Yee S. Ng ◽  
T.T. Tsong
Keyword(s):  
Thin Films ◽  
Cluster Formation ◽  
Polycrystalline Thin Films

Disorder−Order Transition in Mesoscopic Silica Thin Films

2000 ◽  
Vol 12 (6) ◽  
pp. 1536-1548 ◽  
Author(s):  
Nan Yao ◽  
Anthony Y. Ku ◽  
Nobuyoshi Nakagawa ◽  
Tu Lee ◽  
Dudley A. Saville ◽  
...  
Keyword(s):  
Thin Films ◽  
Order Transition ◽  
Silica Thin Films

scholarly journals Optical properties and surface dynamics analyses of homojunction and hetrojunction Q/ITO/ZnO/NZO and Q/ITO/ZnO/NiO thin films

2021 ◽  
Vol 29 ◽  
pp. 104679
Author(s):  
Shahram Solaymani ◽  
Ştefan Ţălu ◽  
Negin Beryani Nezafat ◽  
Laya Dejam ◽  
Azizollah Shafiekhani ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Dynamics ◽  
Dynamics Analyses

Co Cluster Formation Induced by Cu Codoping in Co:ZnO Semiconductor Thin Films

2012 ◽  
Vol 116 (7) ◽  
pp. 4855-4861 ◽  
Author(s):  
Zhiyun Pan ◽  
Fengchun Hu ◽  
Shi He ◽  
Qinghua Liu ◽  
Zhihu Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Cluster Formation ◽  
Semiconductor Thin Films

(ClAlNH)n cluster formation in the gas phase for the chemical vapor deposition of AlN thin films

2001 ◽  
Vol 542 (1-3) ◽  
pp. 239-246 ◽  
Author(s):  
Xiao-Hong Xu ◽  
Hai-Shun Wu ◽  
Fu-Qiang Zhang ◽  
Cong-Jie Zhang ◽  
Zhi-Hao Jin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Cluster Formation ◽  
Chemical Vapor

Comparison of Copper CVD Using Cu(FOD)2 and Cu(HFAC)2 Reduction

1999 ◽  
Vol 564 ◽  
Author(s):  
J. S. Boey ◽  
G. L. Griffin ◽  
A. W. Maverick ◽  
H. Fan
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Order ◽  
Cluster Formation ◽  
Chemical Vapor ◽  
Significant Cluster ◽  
Film Properties ◽  
Film Nucleation

AbstractWe have measured the growth rate and film properties for the chemical vapor deposition of copper thin films using H2 reduction of Cu(fod)2 [H(fod) = 6,6,7,7,8,8,8-heptafluoro-2,2- dimethyl-3,5-octanedione]. The results are directly compared to deposition using Cu(hfac)2 [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Higher growth rates are obtained using Cu(fod)2, in part because of differences in reaction order between the two compounds. However, both compounds exhibit significant cluster formation during film nucleation, which leads to residual porosity and film resistivities above 2 µΩ-cm.

Sign in / Sign up

Export Citation Format

Share Document