Real-time studies of amorphous and microcrystalline Si:H growth by spectroscopic ellipsometry and infrared spectroscopy

Real-time monitoring and process control in amorphous∕crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy

Applied Physics Letters ◽

10.1063/1.1850612 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032112 ◽

Cited By ~ 71

Author(s):

Hiroyuki Fujiwara ◽

Michio Kondo

Keyword(s):

Solar Cells ◽

Infrared Spectroscopy ◽

Process Control ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Crystalline Silicon ◽

Real Time Monitoring ◽

Heterojunction Solar Cells ◽

Silicon Heterojunction Solar Cells

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Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00715-2 ◽

2000 ◽

Vol 266-269 ◽

pp. 38-42 ◽

Cited By ~ 29

Author(s):

H Fujiwara ◽

Y Toyoshima ◽

M Kondo ◽

A Matsuda

Keyword(s):

Infrared Spectroscopy ◽

Real Time ◽

Structural Study ◽

Spectroscopic Ellipsometry ◽

Initial Layer

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Real-time study ofa−Si:H∕c−Siheterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

Physical Review B ◽

10.1103/physrevb.77.205329 ◽

2008 ◽

Vol 77 (20) ◽

Cited By ~ 36

Author(s):

J. J. H. Gielis ◽

P. J. van den Oever ◽

B. Hoex ◽

M. C. M. van de Sanden ◽

W. M. M. Kessels

Keyword(s):

Infrared Spectroscopy ◽

Second Harmonic Generation ◽

Real Time ◽

Harmonic Generation ◽

Spectroscopic Ellipsometry ◽

Second Harmonic ◽

Time Study

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Interface-layer formation in microcrystalline Si:H growth on ZnO substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

Journal of Applied Physics ◽

10.1063/1.1539920 ◽

2003 ◽

Vol 93 (5) ◽

pp. 2400-2409 ◽

Cited By ~ 41

Author(s):

Hiroyuki Fujiwara ◽

Michio Kondo ◽

Akihisa Matsuda

Keyword(s):

Infrared Spectroscopy ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Interface Layer ◽

Layer Formation

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Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

Thin Solid Films ◽

10.1016/j.tsf.2007.06.092 ◽

2008 ◽

Vol 516 (5) ◽

pp. 511-516 ◽

Cited By ~ 7

Author(s):

P.J. van den Oever ◽

J.J.H. Gielis ◽

M.C.M. van de Sanden ◽

W.M.M. Kessels

Keyword(s):

Thin Films ◽

Infrared Spectroscopy ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Hot Wire

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Real-time control and characterization of a-Si:H growth in a-Si:H/c-Si heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 2005 PVSC-05 ◽

10.1109/pvsc.2005.1488375 ◽

2005 ◽

Cited By ~ 2

Author(s):

H. Fujiwara ◽

M. Kondo

Keyword(s):

Solar Cells ◽

Infrared Spectroscopy ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Real Time Control ◽

Heterojunction Solar Cells ◽

Time Control

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Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si:H layer

Solar Energy Materials and Solar Cells ◽

10.1016/s0927-0248(00)00175-6 ◽

2001 ◽

Vol 66 (1-4) ◽

pp. 209-215 ◽

Cited By ~ 6

Author(s):

H. Fujiwara ◽

Y. Toyoshima ◽

M. Kondo ◽

A. Matsuda

Keyword(s):

Infrared Spectroscopy ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Interface Structure

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Depth profiling of silicon–hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.1457535 ◽

2002 ◽

Vol 91 (7) ◽

pp. 4181-4190 ◽

Cited By ~ 48

Author(s):

Hiroyuki Fujiwara ◽

Michio Kondo ◽

Akihisa Matsuda

Keyword(s):

Thin Films ◽

Hydrogen Bonding ◽

Infrared Spectroscopy ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Depth Profiling

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Interface-layer formation mechanism ina−Si:Hthin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy

Physical Review B ◽

10.1103/physrevb.60.13598 ◽

1999 ◽

Vol 60 (19) ◽

pp. 13598-13604 ◽

Cited By ~ 69

Author(s):

H. Fujiwara ◽

Y. Toyoshima ◽

M. Kondo ◽

A. Matsuda

Keyword(s):

Infrared Spectroscopy ◽

Real Time ◽

Formation Mechanism ◽

Spectroscopic Ellipsometry ◽

Film Growth ◽

Interface Layer ◽

Layer Formation

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Characterization of cubic boron nitride growth using UV-extended real-time spectroscopic ellipsometry: Effect of plasma additions and dynamic substrate bias steps

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1486226 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1395-1407 ◽

Cited By ~ 7

Author(s):

J. A. Zapien ◽

R. W. Collins ◽

R. Messier

Keyword(s):

Boron Nitride ◽

Real Time ◽

Spectroscopic Ellipsometry ◽

Cubic Boron Nitride ◽

Substrate Bias

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