Interface-layer formation mechanism ina−Si:Hthin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy

1999 ◽  
Vol 60 (19) ◽  
pp. 13598-13604 ◽  
Author(s):  
H. Fujiwara ◽  
Y. Toyoshima ◽  
M. Kondo ◽  
A. Matsuda
Keyword(s):  
Infrared Spectroscopy ◽  
Real Time ◽  
Formation Mechanism ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Interface Layer ◽  
Layer Formation

scholarly journals New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

2004 ◽  
Vol 808 ◽  
Author(s):  
J.P.M. Hoefnagels ◽  
E. Langereis ◽  
M.C.M. van de Sanden ◽  
W.M.M. Kessels
Keyword(s):  
Real Time ◽  
Surface Science ◽  
Spectroscopic Ellipsometry ◽  
Atomic Hydrogen ◽  
Film Growth ◽  
Ultrahigh Vacuum ◽  
Deposition Process ◽  
Diagnostic Techniques ◽  
Hot Wire ◽  
Optical Diagnostic

ABSTRACTA new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

2008 ◽  
Vol 516 (5) ◽  
pp. 511-516 ◽  
Author(s):  
P.J. van den Oever ◽  
J.J.H. Gielis ◽  
M.C.M. van de Sanden ◽  
W.M.M. Kessels
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Hot Wire
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