SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays

2011 ◽  
Vol 60 (1) ◽  
pp. 100-104 ◽  
Author(s):  
J.Y. Andersson ◽  
P. Ericsson ◽  
H.H. Radamson ◽  
S.G.E. Wissmar ◽  
M. Kolahdouz
Keyword(s):  
Focal Plane ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Quantum Structures ◽  
Thermistor Material

Further Developments in Improved Sensitivity, Low-cost Uncooled IR Detector Focal Plane Arrays

2010 ◽  
Author(s):  
Wendy L. Sarney ◽  
John W. Little ◽  
Kimberley A. Olver ◽  
Frank E. Livingston ◽  
Krisztian Niesz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Ir Detector

HgCdTe Quantum Dot Over Interdigitated Electrode for Mid-Wave Infrared Photon Detection and Its Noise Characterization

2019 ◽  
Vol 19 (03) ◽  
pp. 1950020
Author(s):  
Abhijit Chatterjee ◽  
Amardeep Jagtap ◽  
Naresh Pendyala ◽  
K. S. R. Koteswara Rao
Keyword(s):  
Quantum Dot ◽  
Focal Plane ◽  
Room Temperature ◽  
Low Cost ◽  
Spectral Band ◽  
Focal Plane Arrays ◽  
Electrode Structure ◽  
Metallic Electrode ◽  
Infrared Photon ◽  
Noise Characterization

In this paper, we report the development of mid-wave infrared (MWIR) photon sensor using solution-processed mercury cadmium telluride (Hg[Formula: see text]CdxTe) semiconductor colloidal quantum dots (CQDs) coated over interdigitated metallic electrode structure, having significant response in the MWIR spectral band range ([Formula: see text]–5.0[Formula: see text][Formula: see text]m) at room temperature. HgCdTe CQD has been chemically synthesized. We have characterized the optical and [Formula: see text] noise performances of the developed sensor to understand its behaviors at different operating biases as an introductory step toward development of large-format MWIR focal-plane arrays having similar pixel structure. The optimum biasing conditions have been experimentally evaluated at room temperature. We have achieved a noise equivalent power (NEP) of 2.5[Formula: see text]pW at 1.5-V bias voltage which corresponds to detectivity ([Formula: see text]) in the order of 108. This work highlights the development of low-cost colloidal HgCdTe quantum dot photodetectors and their utility in the monolithic infrared focal-plane arrays.

Low-Cost and Modularized Test Bench for Focal Plane Array

2014 ◽  
Vol 981 ◽  
pp. 46-49
Author(s):  
Xi Qu Chen ◽  
Qiang Lv
Keyword(s):  
Signal Processing ◽  
Power Supply ◽  
Focal Plane ◽  
Test Bench ◽  
Low Cost ◽  
Focal Plane Array ◽  
Focal Plane Arrays ◽  
Simple Test ◽  
Optical Part ◽  
Set Up

In this paper, a low-cost and modularized test bench for microbolometric focal plane array is proposed. Based on the analysis of driving microbolometric focal plane array, we have set up the simple test bench. The test bench consists of four major modules: optical part, driving sequence timer, power supply and signal processing board, and data analyzer. Each module in the test bench is reconfigurable and the driving sequence timer is programmable in system. The proposed test bench is low-cost and has been applied to practical microbolometric focal plane arrays in our laboratory.

scholarly journals Low-Cost Microbolometer Type Infrared Detectors

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 800
Author(s):  
Le Yu ◽  
Yaozu Guo ◽  
Haoyu Zhu ◽  
Mingcheng Luo ◽  
Ping Han ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Focal Plane ◽  
Technological Development ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Micro Electro Mechanical System ◽  
Focal Plane Arrays ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Cmos Compatible

The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With the technological development, the performance of the commercialized CMOS-compatible microbolometers shows only a small gap with that of the mainstream ones. This paper reviews the basics and recent advances of the CMOS-compatible microbolometer IRFPAs in the aspects of the pixel structure, the read-out integrated circuit (ROIC), the focal plane array, and the vacuum packaging.

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