Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

2006 ◽  
Vol 50 (6) ◽  
pp. 1004-1011 ◽  
Author(s):  
Zhi Chen ◽  
Jun Guo
Keyword(s):  
Leakage Current ◽  
Dramatic Reduction ◽  
Gate Leakage Current ◽  
Structure Modification ◽  
Gate Leakage ◽  
Oxide Structure ◽  
Ultrathin Oxides

Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer

2002 ◽  
Vol 38 (20) ◽  
pp. 1223 ◽  
Author(s):  
Chih-Wei Yang ◽  
Yean-Kuan Fang ◽  
Chien-Hao Chen ◽  
Wen-De Wang ◽  
Tin-Yu Lin ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dramatic Reduction ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Capping Layer ◽  
Poly Silicon ◽  
High K ◽  
High K Dielectric

scholarly journals Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

2018 ◽  
Vol 328 ◽  
pp. 30-34 ◽  
Author(s):  
Qi Wang ◽  
Yaomi Itoh ◽  
Tohru Tsuruoka ◽  
Masakazu Aono ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage
Sign in / Sign up

Export Citation Format

Share Document