High performance enhancement-mode HEMT with 3DEG to conduct current and 3DHG as back barrier

2019 ◽  
Vol 130 ◽  
pp. 437-445 ◽  
Author(s):  
Siyu Deng ◽  
Jie Wei ◽  
Dongfa Ouyang ◽  
Bo Zhang ◽  
Chao Yang ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode

A high-performance enhancement-mode AlGaN/GaN HEMT

2010 ◽  
Vol 31 (8) ◽  
pp. 084001 ◽  
Author(s):  
Feng Zhihong ◽  
Xie Shengyin ◽  
Zhou Rui ◽  
Yin Jiayun ◽  
Zhou Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Gan Hemt

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

Nano Research ◽  
2018 ◽  
Vol 11 (3) ◽  
pp. 1227-1237 ◽  
Author(s):  
Hongchao Zhang ◽  
You Meng ◽  
Longfei Song ◽  
Linqu Luo ◽  
Yuanbin Qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Mg Doped

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors

ACS Nano ◽  
2012 ◽  
Vol 7 (1) ◽  
pp. 804-810 ◽  
Author(s):  
Xuming Zou ◽  
Xingqiang Liu ◽  
Chunlan Wang ◽  
Ying Jiang ◽  
Yong Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Metal Doped

High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

2015 ◽  
Vol 62 (3) ◽  
pp. 776-781 ◽  
Author(s):  
Qi Zhou ◽  
Bowen Chen ◽  
Yang Jin ◽  
Sen Huang ◽  
Ke Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Figure Of Merit ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Gan On Si

scholarly journals High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Chao Yang ◽  
Jiayun Xiong ◽  
Jie Wei ◽  
Junfeng Wu ◽  
Bo Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Drain Current ◽  
Depletion Region ◽  
Passivation Layer ◽  
Mis Structure ◽  
Enhancement Mode ◽  
Depletion Effect ◽  
Field Peak ◽  
Channel Region

A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F−treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT). First, the F−in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field) between the gate and drain by the assisted depletion effect but also reduces theE-field peak at the gate end, leading to a higher breakdown voltage (BV). Second, in the AlGaN channel region, the F−region realizes the E-mode and the region without F−maintains a high drain current (ID). Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F−treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat) by 28%.

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