scholarly journals High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Chao Yang ◽  
Jiayun Xiong ◽  
Jie Wei ◽  
Junfeng Wu ◽  
Bo Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Drain Current ◽  
Depletion Region ◽  
Passivation Layer ◽  
Mis Structure ◽  
Enhancement Mode ◽  
Depletion Effect ◽  
Field Peak ◽  
Channel Region

A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F−treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT). First, the F−in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field) between the gate and drain by the assisted depletion effect but also reduces theE-field peak at the gate end, leading to a higher breakdown voltage (BV). Second, in the AlGaN channel region, the F−region realizes the E-mode and the region without F−maintains a high drain current (ID). Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F−treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat) by 28%.

scholarly journals Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 654
Author(s):  
Shouyi Wang ◽  
Qi Zhou ◽  
Kuangli Chen ◽  
Pengxiang Bai ◽  
Jinghai Wang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Drain Current ◽  
Device Performance ◽  
Depletion Effect ◽  
Threshold Voltages ◽  
Gate Structure ◽  
Drain Side ◽  
Effective Reduction ◽  
Field Peak ◽  
Thin Barrier

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the VTH of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the VTH can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible VTH modulation range, which is of great interest for versatile power applications.

A high-performance enhancement-mode AlGaN/GaN HEMT

2010 ◽  
Vol 31 (8) ◽  
pp. 084001 ◽  
Author(s):  
Feng Zhihong ◽  
Xie Shengyin ◽  
Zhou Rui ◽  
Yin Jiayun ◽  
Zhou Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Gan Hemt

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

Nano Research ◽  
2018 ◽  
Vol 11 (3) ◽  
pp. 1227-1237 ◽  
Author(s):  
Hongchao Zhang ◽  
You Meng ◽  
Longfei Song ◽  
Linqu Luo ◽  
Yuanbin Qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Mg Doped

scholarly journals Modelling and Simulation of Tri-layered (s-Si/s-SiGe/s-Si) Channel Double Gate Nano FET

2019 ◽  
Vol 9 (2S) ◽  
pp. 113-116
Keyword(s):  
High Performance ◽  
Channel Length ◽  
Depletion Region ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
The Past ◽  
Mobility Of Charge Carriers ◽  
Subthreshold Leakage ◽  
Effect Transistor ◽  
Channel Region

The down scaling of Meatal Oxide Semiconductor Field Effect transistor (MOSFET) devices nevertheless the most important and effective way for accomplishing high performance with low power adopted the miniaturization trend of channel length from the past, which is very aggressive. The double gate NanoFET with the incorporation of the strain Silicon technology is developed here on 45nm gate length comprises of tri-layered (s-Si/s-SiGe/s-Si) channel region with varied thicknesses. The induction of strain increases mobility of charge carriers. Two gates are deployed in bottom and up side of strained channel provides better control over the depletion region developed by applying same gate bias voltage. This newly developed double gate NanoFET on 45nm channel length provides 63% reduced subthreshold leakage current, and maximum electron drift velocity in strained channel.

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors

ACS Nano ◽  
2012 ◽  
Vol 7 (1) ◽  
pp. 804-810 ◽  
Author(s):  
Xuming Zou ◽  
Xingqiang Liu ◽  
Chunlan Wang ◽  
Ying Jiang ◽  
Yong Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Performance ◽  
Performance Enhancement ◽  
Enhancement Mode ◽  
Metal Doped
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