Low temperature iron gettering by grown-in defects in p-type Czochralski silicon

2016 ◽  
Vol 99 ◽  
pp. 192-196 ◽  
Author(s):  
Haiyan Zhu ◽  
Xuegong Yu ◽  
Xiaodong Zhu ◽  
Yichao Wu ◽  
Jian He ◽  
...  
Keyword(s):  
Low Temperature ◽  
Czochralski Silicon ◽  
P Type

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes

1999 ◽  
Vol 69-70 ◽  
pp. 551-556 ◽  
Author(s):  
Reinhart Job ◽  
J.A. Weima ◽  
G. Grabosch ◽  
D. Borchert ◽  
Wolfgang R. Fahrner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Processes ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 547-552 ◽  
Author(s):  
Yue Long Huang ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
Reinhart Job ◽  
Yue Ma ◽  
...  
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Free Carriers ◽  
Shallow Donors ◽  
P Type

P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the formation of hydrogen-related shallow donors. A deep level (E1) with an activation energy of about EC-0.12 eV is observed by DLTS measurement and assigned to a metastable state of the hydrogen-related shallow donors. At an annealing temperature of 340°C, the E1 centres disappear and oxygen thermal donors appear. The concentrations of the oxygen thermal donors are found typically to be 2-3 decades lower than that required for over-compensating the initial p-type doping and for contributing the excess free carriers.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Sticky thermoelectric materials for flexible thermoelectric modules to capture low-temperature waste heat

MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 481-487 ◽  
Author(s):  
Norifusa Satoh ◽  
Masaji Otsuka ◽  
Yasuaki Sakurai ◽  
Takeshi Asami ◽  
Yoshitsugu Goto ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Waste Heat ◽  
Air Cooling ◽  
Conductive Adhesives ◽  
Hot Plate ◽  
Low Thermal Conductivity ◽  
Te Modules ◽  
P Type ◽  
Flexible Thermoelectric

ABSTRACTWe examined a working hypothesis of sticky thermoelectric (TE) materials, which is inversely designed to mass-produce flexible TE sheets with lamination or roll-to-roll processes without electric conductive adhesives. Herein, we prepared p-type and n-type sticky TE materials via mixing antimony and bismuth powders with low-volatilizable organic solvents to achieve a low thermal conductivity. Since the sticky TE materials are additionally injected into punched polymer sheets to contact with the upper and bottom electrodes in the fabrication process, the sticky TE modules of ca. 2.4 mm in thickness maintained temperature differences of ca. 10°C and 40°C on a hot plate of 40 °C and 120°C under a natural-air cooling condition with a fin. In the single-cell resistance analysis, we found that 75∼150-µm bismuth powder shows lower resistance than the smaller-sized one due to the fewer number of particle-particle interfaces in the electric pass between the upper and bottom electrodes. After adjusting the printed wiring pattern for the upper and bottom electrodes, we achieved 42 mV on a hot plate (120°C) with the 6 x 6 module having 212 Ω in the total resistance. In addition to the possibility of mass production at a reasonable cost, the sticky TE materials provide a low thermal conductivity for flexible TE modules to capture low-temperature waste heat under natural-air cooling conditions with fins for the purpose of energy harvesting.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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