Atomic-layer-deposited buffer layers for thin film solar cells using earth-abundant absorber materials: A review

2018 ◽  
Vol 176 ◽  
pp. 49-68 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Dip K. Nandi ◽  
Soo-Hyun Kim ◽  
Jaeyeong Heo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Earth Abundant

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

Development of Cu(InGa)Se2 Thin Film Solar Cells with Cd-Free Buffer Layers

1996 ◽  
Vol 426 ◽  
Author(s):  
M. Konagai ◽  
Y. Ohtake ◽  
T. Okamoto
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Light Illumination ◽  
Solar Simulator ◽  
Cell Parameters ◽  
Cigs Thin Film

AbstractCu(InGa)Se2(CIGS) thin film absorbers were fabricated by a three-stage method using a coevaporation apparatus. As a Cd-free buffer layer, ZnSe, InxSe, GaxSey and ZnInxSey buffer layers have been deposited on the CIGS absorber continuously in the same apparatus. Atomic layer deposition (ALD) was employed as a growth technique for ZnSe. This technique offers a good thickness control as well as a good surface coverage. By irradiating with a solar simulator, all the solar cell parameters increased drastically for the first 50 minutes of the irradiation and then saturated at longer irradiation times. This phenomenon did not appear for the cells with a CdS buffer layer. The best efficiency of ZnO/ZnSe/CIGS thin film solar cells with about 10 nm thick ZnSe buffer layer was 11.6%. On the other hand, ZnO/InxSey/CIGS thin film solar cells showed very stable characteristics under the light illumination, and initial measurements show an efficiency of 13.0%.

A review on atomic layer deposited buffer layers for Cu(In,Ga)Se2 (CIGS) thin film solar cells: Past, present, and future

Solar Energy ◽  
2020 ◽  
Vol 209 ◽  
pp. 515-537
Author(s):  
Soumyadeep Sinha ◽  
Dip K. Nandi ◽  
Pravin S. Pawar ◽  
Soo-Hyun Kim ◽  
Jaeyeong Heo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film

Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

2006 ◽  
Vol 100 (4) ◽  
pp. 044506 ◽  
Author(s):  
C. Platzer-Björkman ◽  
T. Törndahl ◽  
D. Abou-Ras ◽  
J. Malmström ◽  
J. Kessler ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Alignment ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Layer Deposition

Fabrication of earth abundant Cu2ZnSnSSe4 (CZTSSe) thin film solar cells with cadmium free zinc sulfide (ZnS) buffer layers

2017 ◽  
Vol 695 ◽  
pp. 2652-2660 ◽  
Author(s):  
Ju Young Park ◽  
R.B.V. Chalapathy ◽  
A.C. Lokhande ◽  
Chang Woo Hong ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Zinc Sulfide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Free Zinc ◽  
Earth Abundant

Atomic layer deposited zinc oxysulfide n-type buffer layers for Cu2ZnSn(S,Se)4 thin film solar cells

2016 ◽  
Vol 155 ◽  
pp. 43-50 ◽  
Author(s):  
Hee Kyeung Hong ◽  
In Young Kim ◽  
Seung Wook Shin ◽  
Gwang Yeom Song ◽  
Jae Yu Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Zinc Oxysulfide

Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu 2 BaSnS 4 Thin‐Film Solar Cells

2016 ◽  
Vol 7 (6) ◽  
pp. 1601803 ◽  
Author(s):  
Jie Ge ◽  
Prakash Koirala ◽  
Corey R. Grice ◽  
Paul J. Roland ◽  
Yue Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Open Circuit ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Earth Abundant ◽  
Open Circuit Voltages
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