Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

2006 ◽  
Vol 100 (4) ◽  
pp. 044506 ◽  
Author(s):  
C. Platzer-Björkman ◽  
T. Törndahl ◽  
D. Abou-Ras ◽  
J. Malmström ◽  
J. Kessler ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Alignment ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Layer Deposition

Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se2 thin-film solar cells

2001 ◽  
Vol 387 (1-2) ◽  
pp. 29-32 ◽  
Author(s):  
E.B Yousfi ◽  
B Weinberger ◽  
F Donsanti ◽  
P Cowache ◽  
D Lincot
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Thin Film Solar Cells ◽  
Indium Sulfide ◽  
Layer Deposition

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

Atomic layer deposition of Zn1−xMgxO buffer layers for Cu(In,Ga)Se2 solar cells

2007 ◽  
Vol 15 (3) ◽  
pp. 225-235 ◽  
Author(s):  
T. Törndahl ◽  
C. Platzer-Björkman ◽  
J. Kessler ◽  
M. Edoff
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition

Influence of chemical bath deposition parameters on the formation of CuInS2 / Zn(Se,O) junctions for thin film solar cells

2001 ◽  
Vol 668 ◽  
Author(s):  
A.M. Chaparro ◽  
M.T. Gutiérrez ◽  
J. Herrero ◽  
J. Klaer
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Open Circuit Potential ◽  
Open Circuit ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Deposition Parameters ◽  
Layer Deposition ◽  
Cbd Method

ABSTRACTThin film solar cells of CuInS2/Zn(Se,O)/ZnO configuration have been studied as a function of the Zn(Se,O) buffer layer deposition parameters. Deposition of the buffer films was carried out by the chemical bath deposition (CBD) method, at different bath temperatures and compositions, and followed in situ with a quartz crystal microbalance. The CBD conditions were chosen to grow Zn(Se,O) buffer layers under different kinetic regimes but maintaining the same buffer thickness. The cells have been characterised with current-voltage and quantum efficiency measurements. Light soaking effects and medium term stability have been checked. It is found that Zn(Se,O) grown under predominant electroless kinetics gives rise to buffer films richer in oxygen, which allow for higher fill factors, higher efficiencies (around 10%) and stability of the cells. These cells show however lower open circuit potential. On the other hand, Zn(Se,O) buffers grown under chemical regime become richer in selenium, which gives rise to cells with higher open circuit potential, but lower fill factor, conversion efficiency and stability. Light soaking effects are also more important with the chemically grown buffers.

Cu(InGa)Se2Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 4989-4992 ◽  
Author(s):  
Sutichai Chaisitsak ◽  
Takeshi Sugiyama ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
High Resistivity ◽  
Layer Deposition

scholarly journals Effective module level encapsulation of CIGS solar cells with Al2O3 thin film grown by atomic layer deposition

2021 ◽  
Vol 222 ◽  
pp. 110914
Author(s):  
Shan-Ting Zhang ◽  
Maxim Guc ◽  
Oliver Salomon ◽  
Roland Wuerz ◽  
Victor Izquierdo-Roca ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells ◽  
Al2o3 Thin Film
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