Oxygenated CdS Buffer Layers Enabling High Open‐Circuit Voltages in Earth‐Abundant Cu 2 BaSnS 4 Thin‐Film Solar Cells

2016 ◽  
Vol 7 (6) ◽  
pp. 1601803 ◽  
Author(s):  
Jie Ge ◽  
Prakash Koirala ◽  
Corey R. Grice ◽  
Paul J. Roland ◽  
Yue Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Open Circuit ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Earth Abundant ◽  
Open Circuit Voltages

Solution-Processed ZnxCd1–xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage

2019 ◽  
Vol 12 (6) ◽  
pp. 7001-7009 ◽  
Author(s):  
Pravin S. Pawar ◽  
Jae Yu Cho ◽  
KrishnaRao Eswar Neerugatti ◽  
Soumyadeep Sinha ◽  
Tanka Raj Rana ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Vapor Transport ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed

Silicon Thin-Film Solar Cells on Glass With Open-Circuit Voltages Above 620 mV Formed by Liquid-Phase Crystallization

2014 ◽  
Vol 4 (6) ◽  
pp. 1496-1501 ◽  
Author(s):  
Daniel Amkreutz ◽  
Jan Haschke ◽  
Sven Kuhnapfel ◽  
Paul Sonntag ◽  
Bernd Rech
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Liquid Phase ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Open Circuit Voltages

Influence of chemical bath deposition parameters on the formation of CuInS2 / Zn(Se,O) junctions for thin film solar cells

2001 ◽  
Vol 668 ◽  
Author(s):  
A.M. Chaparro ◽  
M.T. Gutiérrez ◽  
J. Herrero ◽  
J. Klaer
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Open Circuit Potential ◽  
Open Circuit ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Deposition Parameters ◽  
Layer Deposition ◽  
Cbd Method

ABSTRACTThin film solar cells of CuInS2/Zn(Se,O)/ZnO configuration have been studied as a function of the Zn(Se,O) buffer layer deposition parameters. Deposition of the buffer films was carried out by the chemical bath deposition (CBD) method, at different bath temperatures and compositions, and followed in situ with a quartz crystal microbalance. The CBD conditions were chosen to grow Zn(Se,O) buffer layers under different kinetic regimes but maintaining the same buffer thickness. The cells have been characterised with current-voltage and quantum efficiency measurements. Light soaking effects and medium term stability have been checked. It is found that Zn(Se,O) grown under predominant electroless kinetics gives rise to buffer films richer in oxygen, which allow for higher fill factors, higher efficiencies (around 10%) and stability of the cells. These cells show however lower open circuit potential. On the other hand, Zn(Se,O) buffers grown under chemical regime become richer in selenium, which gives rise to cells with higher open circuit potential, but lower fill factor, conversion efficiency and stability. Light soaking effects are also more important with the chemically grown buffers.

Effect of Location of Sodium Precursor on the Morphological and Device Properties of CIGS Solar Cells

2013 ◽  
Vol 1538 ◽  
pp. 51-60 ◽  
Author(s):  
Neelkanth G. Dhere ◽  
Ashwani Kaul ◽  
Helio Moutinho
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Cigs Solar Cells ◽  
Device Properties ◽  
Open Circuit Voltages

ABSTRACTSodium plays an important role in the development of device quality CIGS (Cu-In-Ga-Se) and CIGSeS (Cu-In-Ga-Se-S) chalcopyrite thin film solar cells. In this study the effect of location of sodium precursor on the device properties of CIGS solar cells was studied. Reduction in the surface roughness and improvement in the crystallinity and morphology of the absorber films was observed with increase in sodium quantity from 0 Å to 40 Å and to 80 Å NaF. It was found that absorber films with 40 Å and 80 Å NaF in the front of the metallic precursors formed better devices compared to those with sodium at the back. Higher open circuit voltages and short circuit current values were achieved for devices made with these absorber films as well.

Fabrication of earth abundant Cu2ZnSnSSe4 (CZTSSe) thin film solar cells with cadmium free zinc sulfide (ZnS) buffer layers

2017 ◽  
Vol 695 ◽  
pp. 2652-2660 ◽  
Author(s):  
Ju Young Park ◽  
R.B.V. Chalapathy ◽  
A.C. Lokhande ◽  
Chang Woo Hong ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Zinc Sulfide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Free Zinc ◽  
Earth Abundant

DEPENDENCE OF DEVICE CHARACTERISTICS OF BULK-HETEROJUNCTION ORGANIC THIN-FILM SOLAR CELLS ON CONCENTRATION OF GLYCEROL AND SORBITOL ADDITION IN PEDOT: PSS SOLUTIONS FOR FABRICATING BUFFER LAYERS

2010 ◽  
Vol 19 (04) ◽  
pp. 653-662 ◽  
Author(s):  
YUSUKE YAMAKI ◽  
KAZUHIRO MARUMOTO ◽  
TAKUYA FUJIMORI ◽  
TATSUO MORI
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Organic Thin Film ◽  
Device Structure

We have investigated the dependence of device characteristics of bulk-heterojunction organic thin-film solar cells on the concentration of glycerol and sorbitol addition in poly(3,4-ethylenedioxy thiophene):poly(4-styrene sulfonate) (PEDOT:PSS) solutions for fabricating buffer layers. The device structure is ITO/buffer/regioregular poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C 61-butyric acid methylester (PCBM)/ Al . Glycerol addition is effective for increasing power conversion efficiency (PCE) from 1.25 to 1.41% because of the increase in short-circuit current density (J sc ) without decreasing open-circuit voltage (V oc ). On the other hand, sorbitol addition decreases PCE from 1.25 to 1.04%, owing to the decrease in V oc . This difference in V oc behavior is ascribed to different work function of PEDOT:PSS with glycerol and sorbitol treatment.

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

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