Lateral phase separation in Cu-In-Ga precursor and Cu(In,Ga)Se 2 absorber thin films

2017 ◽  
Vol 162 ◽  
pp. 120-126 ◽  
Author(s):  
Jan-Peter Bäcker ◽  
Sebastian S. Schmidt ◽  
Humberto Rodriguez-Alvarez ◽  
Christian Wolf ◽  
Christian A. Kaufmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Lateral Phase Separation

scholarly journals A solution concentration dependent transition from self-stratification to lateral phase separation in spin-cast PS:d-PMMA thin films

2010 ◽  
Vol 31 (4) ◽  
pp. 369-375 ◽  
Author(s):  
A. D. F. Dunbar ◽  
P. Mokarian-Tabari ◽  
A. J. Parnell ◽  
S. J. Martin ◽  
M. W. A. Skoda ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Solution Concentration ◽  
Lateral Phase Separation

Lateral Phase Separation Gradients in Spin-Coated Thin Films of High-Performance Polymer:Fullerene Photovoltaic Blends

2011 ◽  
Vol 21 (16) ◽  
pp. 3169-3175 ◽  
Author(s):  
Lintao Hou ◽  
Ergang Wang ◽  
Jonas Bergqvist ◽  
B. Viktor Andersson ◽  
Zhongqiang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
High Performance ◽  
Lateral Phase Separation

scholarly journals Phase separation during co-deposition of Al–Ge thin films

1992 ◽  
Vol 7 (3) ◽  
pp. 653-666 ◽  
Author(s):  
C.D. Adams ◽  
M. Atzmon ◽  
Y-T. Cheng ◽  
D.J. Srolovitz
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Metastable Phase ◽  
Film Surface ◽  
Microstructure Development ◽  
Free Energies ◽  
Lateral Phase Separation ◽  
The Stability ◽  
Interfacial Free Energies ◽  
Film Substrate

We present the results of a combined experimental and theoretical investigation of phase separation and microstructure development in co-deposited Al–Ge thin films. For small film thicknesses and deposition temperatures above 150 °C the phase-separated films consist of an array of domains of the Al- and Ge-rich terminal phases (lateral phase separation). Films deposited at 100 °C or less contained one or both of the terminal phases plus a metastable phase. We show that the domain structure evolves during deposition in a manner consistent with a surface interdiffusion controlled process. As film thickness increases we observe a transition from the laterally phase-separated microstructure to a layered microstructure exhibiting phase separation perpendicular to the film/substrate interface (transverse phase separation), with Al segregating to the film surface. We present a thermodynamic argument based on the competition between surface and interfacial free energies to explain this transition. Finally, we discuss the stability of the transverse phase-separated microstructure in the thick-film limit in terms of the transport of Ge through the Al-rich surface layer.

scholarly journals Adhesion-induced lateral phase separation in membranes

2000 ◽  
Vol 3 (3) ◽  
pp. 259-271 ◽  
Author(s):  
S. Komura ◽  
D. Andelman
Keyword(s):  
Phase Separation ◽  
Lateral Phase Separation

Oxygen off-stoichiometry and phase separation in EuO thin films

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
S. G. Altendorf ◽  
A. Efimenko ◽  
V. Oliana ◽  
H. Kierspel ◽  
A. D. Rata ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Separation

Phase Separation and Molecular Intermixing in Polymer–Fullerene Bulk Heterojunction Thin Films

2012 ◽  
Vol 3 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Matthias A. Ruderer ◽  
Robert Meier ◽  
Lionel Porcar ◽  
Robert Cubitt ◽  
Peter Müller-Buschbaum
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Bulk Heterojunction

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

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