Phase Separation and Molecular Intermixing in Polymer–Fullerene Bulk Heterojunction Thin Films

2012 ◽  
Vol 3 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Matthias A. Ruderer ◽  
Robert Meier ◽  
Lionel Porcar ◽  
Robert Cubitt ◽  
Peter Müller-Buschbaum
2011 ◽  
Vol 364 ◽  
pp. 465-469 ◽  
Author(s):  
Vivi Fauzia ◽  
Akrajas Ali Umar ◽  
Muhamad Mat Salleh ◽  
Muhammad Yahaya

This paper reports an application of Atomic Force Microscopy (AFM) phase imaging to observe the phase separation between electron donor and acceptor materials in bulk heterojunction organic solar cells. The solar cells were fabricated using inkjet printed thin films of blended poly (3-octylthiophene-2,5-diyl)(P3OT) and (6,6)-phenyl C71 butyric acid methyl ester (PC71BM) as donor and acceptor materials respectively. The content PC71BM in the blended was varying from 25, 50 and 75 wt %. The AFM phase images of the thin film which contains 25 wt % PC71BM indicated that the acceptor molecules, PC71BM, are well distributed in the polymer chain of donor material, P3OT. The solar cell contains this film has the highest generated photocurrent. Hence, the phase separation between electron donor and acceptor materials in bulk heterojunction organic solar cells is one essential aspect that influences generation of photocurrent.


2011 ◽  
Vol 84 (15) ◽  
Author(s):  
S. G. Altendorf ◽  
A. Efimenko ◽  
V. Oliana ◽  
H. Kierspel ◽  
A. D. Rata ◽  
...  
Keyword(s):  

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.


2000 ◽  
Vol 332 (1-4) ◽  
pp. 207-213 ◽  
Author(s):  
J. Jung ◽  
H. Yan ◽  
H. Darhmaoui ◽  
W.K. Kwok

2020 ◽  
Vol 190 ◽  
pp. 110967 ◽  
Author(s):  
Russell A. Banta ◽  
Timothy W. Collins ◽  
Ricky Curley ◽  
John O'Connell ◽  
Paul W. Young ◽  
...  

Langmuir ◽  
2019 ◽  
Vol 35 (11) ◽  
pp. 4011-4019 ◽  
Author(s):  
Dowan Kim ◽  
Donghyo Hahm ◽  
Soonhyoung Kwon ◽  
Jeewoo Lim ◽  
Kookheon Char

2017 ◽  
Vol 110 (4) ◽  
pp. 042903 ◽  
Author(s):  
Xiaoyu Kang ◽  
Smitha Shetty ◽  
Lauren Garten ◽  
Jon F. Ihlefeld ◽  
Susan Trolier-McKinstry ◽  
...  

2007 ◽  
Vol 126 (4) ◽  
pp. 044709 ◽  
Author(s):  
L. Giovanelli ◽  
P. Vilmercati ◽  
C. Castellarin-Cudia ◽  
J.-M. Themlin ◽  
L. Porte ◽  
...  
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