Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot-wire chemical vapor deposition (HW-CVD) method: Role of substrate temperature

2007 ◽  
Vol 91 (8) ◽  
pp. 714-720 ◽  
Author(s):  
S.R. Jadkar ◽  
J.V. Sali ◽  
A.M. Funde ◽  
Nabeel Ali Bakr ◽  
P.B. Vidyasagar ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
Hydrogenated Amorphous

Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
Xiao Liu ◽  
R.O. Pohl ◽  
R.S. Crandall
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Internal Friction ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Hydrogenated Amorphous

AbstractWe observe an increase of the low-temperature internal friction of hydrogenated amorphous silicon prepared by both hot-wire and plasma-enhanced chemical-vapor deposition after extended light-soaking at room temperature. This increase, and the associated change in sound velocity, can be explained by an increase of the density of two-level tunneling states, which serves as a measure of the lattice disorder. The amount of increase in internal friction is remarkably similar in both types of films although the amount and the microstructure of hydrogen are very different. Experiments conducted on a sample prepared by hot-wire chemical-vapor deposition show that this change anneals out gradually at room temperature in about 70 days. Possible relation of the light-induced changes in the low-temperature elastic properties to the Staebler-Wronski effect is discussed.

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