Lowering of thickness of boron-doped microcrystalline hydrogenated silicon film by seeding technique

2005 ◽  
Vol 86 (3) ◽  
pp. 365-371 ◽  
Author(s):  
Arindam Sarker ◽  
Chandan Banerjee ◽  
A.K. Barua
Keyword(s):  
Silicon Film ◽  
Hydrogenated Silicon ◽  
Boron Doped

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Effect of structure variation on thermal conductivity of hydrogenated silicon film

2011 ◽  
Vol 257 (20) ◽  
pp. 8326-8329 ◽  
Author(s):  
Shibin Li ◽  
Yadong Jiang ◽  
Zhiming Wu ◽  
Jiang Wu ◽  
Zhihua Ying ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Film ◽  
Structure Variation ◽  
Hydrogenated Silicon ◽  
Effect Of Structure

Growth of Thin μc-Si:H on Intrinsic a-Si:H for Solar Cells Application

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Pemet ◽  
M. Goetz ◽  
H. Keppner ◽  
A. Shah
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Solar Cell Performance ◽  
Hydrogenated Silicon ◽  
Boron Doped ◽  
High Efficiency Solar Cells ◽  
Amorphous Substrates ◽  
Interface Treatment

AbstractThe <p> μc-SiC:H / <i> a-Si:H junction can be considered to be a sub-system of a n/i/p solar cell. Optimised performance of this junction can be assumed to be a key feature for obtaining high efficiency solar cells.In this paper the authors present results on the conductivity of boron doped microcrystalline hydrogenated silicon (<p> μc-Si:H) thin films deposited on amorphous substrates (e.g. glass or glass/<i> a-Si:H). It is shown that, without any treatment of the substrate or of the underlying surface, the <p> layers showed a strongly reduced conductivity. This indicates either a bad nucleation or a poor microcrystalline behaviour. By using an appropriate surface treatment of the substrate, a gain in photoconductivity of about three orders of magnitude could be obtained (σ > 3 S/cm at a layer thickness of 400Å). We conclude from this, that for thin <p> type μc-Si:H layers the nucleation conditions are essential for obtaining best electric properties of the film w.r.t. solar cell performance.Based on these results, interface treatment was successfully implemented in n/i/p solar cells deposited on TCO coated glass and stainless steel. The results of these experiments are also presented.

Electronic and Structural Characterisation of Boron-Doped Hydrogenated Silicon Thin and Ultrathin Films Prepared by RF Magnetron Sputtering

1994 ◽  
Vol 33 (Part 1, No. 8) ◽  
pp. 4799A-4799A
Author(s):  
Shailesh N. Sharma ◽  
Subhasis Bose ◽  
Ratnabali Banerjee ◽  
Ajit K. Batabyal ◽  
Dipali Banerjee ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Hydrogenated Silicon ◽  
Structural Characterisation ◽  
Boron Doped

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

2009 ◽  
Vol 30 (6) ◽  
pp. 063001 ◽  
Author(s):  
Shi Mingji ◽  
Wang Zhanguo ◽  
Liu Shiyong ◽  
Peng Wenbo ◽  
Xiao Haibo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Tunnel Junction ◽  
Silicon Film ◽  
Tandem Solar Cell ◽  
Boron Doped ◽  
Doped Silicon

The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

2009 ◽  
Vol 610-613 ◽  
pp. 367-371
Author(s):  
Hao Liu ◽  
Wei Jia Zhang ◽  
Shi Liang Jia ◽  
Wei Guo ◽  
Jin Wu
Keyword(s):  
Silicon Substrate ◽  
Electron Probe ◽  
Deposition Temperature ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Deposition Pressure ◽  
Boron Doped ◽  
High Deposition Temperature ◽  
Electron Probe Microanalyser

Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.

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