Effect of structure variation on thermal conductivity of hydrogenated silicon film

2011 ◽  
Vol 257 (20) ◽  
pp. 8326-8329 ◽  
Author(s):  
Shibin Li ◽  
Yadong Jiang ◽  
Zhiming Wu ◽  
Jiang Wu ◽  
Zhihua Ying ◽  
...  
2011 ◽  
Vol 23 (1) ◽  
pp. 224-228
Author(s):  
Shibin Li ◽  
Yadong Jiang ◽  
Zhiming Wu ◽  
Jiang Wu ◽  
Zhihua Ying ◽  
...  

A line source technique has been developed for non-steady-state measurements of the therm al conductivities of liquids over an extended range of temperature. The accuracy of the method, which is an absolute one, has been critically exam ined. T hermal conductivities of liquid benzene, toluene, diphenyl, o-,m - and^p-terphenyl, estimated to be accurate to + 0*25 % , have been obtained. These results are discussed in terms of the effect of structure on the transport properties of liquids and the relation between the coefficient of thermal expansion and the temperature dependence of thermal conductivity.


1983 ◽  
Vol 30 ◽  
Author(s):  
H.C. Fiedler

ABSTRACTPlasma sprayed deposits of alumina are normally of the metastable gamma phase, which transforms to alpha upon heating to an elevated temperature. The poor thermal conductivity of gamma phase is improved by transforming to alpha, but the improvement is restricted by the fragmented nature of the structure, a consequence of alpha being a denser phase than gamma.Alpha phase has been reported to form when deposits are made on preheated substrates. It was found that reducing the distance between gun and deposition surface, thereby raising the temperature of the latter, resulted in transforming gamma to alpha, and as the temperature continued to rise, alpha formed directly from the liquid. The thermal conductivity of alpha formed directly from the liquid is 0.27 Watt/cm K at 323 K, which approaches the thermal conductivity given for 99.5% pure, 98% dense, polycrystalline alpha alumina.


2001 ◽  
Author(s):  
Chi Hsiang Pan ◽  
Chien Li Tung

Abstract In this paper, we present a simple method to determine thermal conductivity coefficients (TCC) of thin films with a compact characterization microstructure and by using common measuring apparatus. The microstructure can be fabricated by a simple surface micromachining technique and in situ along with active devices on the same chip. Analytical expressions are derived to calculate the thermal conductivity coefficients of thin films from the experimental data. Experimental results with a heavily n-doped LPCVD poly crystalline silicon film are used herein to demonstrate the effectiveness of the proposed method. The obtained thermal conductivity coefficient seems to decrease a little as temperature increase and the average is around 39 Wm−1 °C−1 at 400°C below.


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