Electrical and optical properties of highly conducting CdO:F thin film deposited by sol–gel dip coating technique

2004 ◽  
Vol 81 (2) ◽  
pp. 279-289 ◽  
Author(s):  
P Ghosh
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Electrical And Optical Properties ◽  
Coating Technique ◽  
Dip Coating Technique

Electrical and Optical Properties of Zinc Oxide Thin Films by Sol-Gel Dip-Coating Technique

2011 ◽  
Author(s):  
Mohd Firdaus Bin Malek ◽  
Mohamad Hafiz Bin Mamat ◽  
Musa Bin Mohamed Zahidi ◽  
Zainizan Bin Sahdan ◽  
Zuraida Binti Khusaimi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Coating Technique ◽  
Dip Coating Technique

Solar-Water-Splitting BiVO4 Thin-Film Photoanodes Prepared By Using a Sol-Gel Dip-Coating Technique

ChemPhotoChem ◽  
2017 ◽  
Vol 1 (6) ◽  
pp. 273-280 ◽  
Author(s):  
Samantha Hilliard ◽  
Dennis Friedrich ◽  
Stéphane Kressman ◽  
Henri Strub ◽  
Vincent Artero ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Splitting ◽  
Sol Gel ◽  
Dip Coating ◽  
Solar Water ◽  
Coating Technique ◽  
Solar Water Splitting ◽  
Dip Coating Technique

Structural and optical properties of molybdenum oxide thin films prepared by the dip coating technique

2021 ◽  
Author(s):  
Danial Ahmad; M. Amer Khan ◽  
Arslan Mehmood; Amjad Sohail; S. S. Ali Gillani
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Molybdenum Oxide ◽  
Dip Coating ◽  
Oxide Thin Film ◽  
Visible Spectroscopy ◽  
Structural And Optical Properties ◽  
Coating Technique ◽  
Uv Visible ◽  
Dip Coating Technique

Due to excellent structural and optical properties of molybdenum oxide (MoO, MoO2 and MoO3) were preferred in multiple applications such as gas sensing solar cell, optoelectronics devices and medical physics. The present study was related to synthesis of molybdenum oxide thin film via dip coating technique and the film was characterised by using various characterisation techniques such as XRD, SEM and UV-visible spectroscopy. The monoclinic crystal structure and the crystallite size (29.16~52.77) was investigated by XRD analysis. Moreover, SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibit the maximum absorption in ultra-violet region and band gap decrease (3.05 to 2.55 eV) with increased the oxide radical in molybdenum thin film. The present results suggest that the series of molybdenum oxide (MoO, MoO2 and MoO3) improved the structural and optical properties which make it a good candidate for photocatalytic activity.

Growth of ZnO Nanorods by Template-Free Sol-Gel Dip-Coating Technique: Effect of Pre-Annealing Temperature

2019 ◽  
Vol 397 ◽  
pp. 111-117
Author(s):  
Djamal Eddine Guitoume ◽  
Fayssal Ynineb ◽  
Djelloul Mendil ◽  
Hichem Farh ◽  
Nadhir Attaf ◽  
...  
Keyword(s):  
Optical Properties ◽  
Heating Temperature ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Visible Region ◽  
Dip Coating ◽  
Coating Technique ◽  
Xrd Diffraction ◽  
Different Temperatures ◽  
Dip Coating Technique

In this work, we studied the effect of pre-heating temperature on the structural and optical properties of ZnO nanorods grown by free template sol-gel dip-coating technique. The prepared films were pre-heated at different temperatures: 240, 260, 280 and 300 °C, then annealed at 500 °C for one hour. The structural properties of the prepared samples were investigated by X-ray diffraction (XRD) and the surface morphologies were studied by scanning electron microscope (SEM). The optical properties were studied by means of UV-Visible spectrophotometer. The XRD diffraction spectra show that all the prepared samples have a ZnO wurtzite structure with a preferential orientation along (002) axis. SEM micrographs revealed the formation of well-aligned ZnO nanorods for the sample preheated at 280 °C. The prepared ZnO nanorod structured thin films are highly transparent in the visible region with an average transmittance above 85 % in the 400–800 nm wavelength range.

Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

2013 ◽  
Vol 334-335 ◽  
pp. 349-352
Author(s):  
N. Baydogan ◽  
Y. Gokce ◽  
Murat Baydogan ◽  
Huseyin Cimenoglu
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Capacitance Voltage ◽  
Abrupt Interface ◽  
P Type ◽  
Dip Coating Technique ◽  
Si Wafer

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

Electrical and optical properties of aluminium doped zinc oxide transparent conducting oxide films prepared by dip coating technique

2017 ◽  
Vol 34 (1) ◽  
pp. 1-8 ◽  
Author(s):  
Libu Manjakkal ◽  
I. Packia Selvam ◽  
S.N. Potty ◽  
R.S. Shinde
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Dip Coating ◽  
Electrical And Optical Properties ◽  
Content Type ◽  
Coating Technique ◽  
Envelope Method ◽  
Dip Coating Technique

Purpose Aluminium-doped zinc oxide thin films exhibit interesting optoelectronic properties, which make them suitable for fabrication of photovoltaic cell, flat panel display electrode, etc. It has been shown that aluminium dopant concentration and annealing treatment in reduced atmosphere are the major factors affecting the electrical and optical properties of aluminium doped zinc oxide (AZO) film. Here, the authors report the structural, optical and electrical properties of aluminium-doped zinc oxide thin films fabricated by dip coating technique and annealed in air atmosphere, thereby avoiding hazardous environments such as hydrogen. The aim of this paper was to systematically investigate the effect of annealing temperature on the electrical properties of dip-coated film. Design/methodology/approach Aluminium-doped ZnO thin films were prepared on corning substrates by dip coating method. Aluminium concentration in the film varied from 0.8 to 1.4 mol per cent. Films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, UV-visible spectroscopy and Hall measurements. The deposited films were heat treated at 450-600°C, in steps of 50°C for 1 h in air to study the improvement in electrical properties. Films were also prepared by annealing at 600°C in air for durations of 1, 2, 4 and 6 h. Envelope method was used to calculate the variation of the refractive index and extinction coefficient with wavelength. Findings The electrical resistivity is found to decrease considerably when the annealing time is increased from 1 to 4 h. The films exhibited high transmittance (>90 per cent) in the visible range, and the optical band gaps were found to change as per the Moss–Burstien effect, and this was consistent with the observed changes in the carrier concentration. Originality/value The study shows the effect of annealing in air, avoiding hazardous reduced environment, such as hydrogen, to study the improvement in electrical and optical properties of aluminum-doped zinc oxide films. Envelope method was used to calculate the variation of optical constants with wavelength.

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