Deposition of tin oxide thin film by sol-gel dip coating technique and its characterization

2019 ◽  
Author(s):  
B. R. Aswathy ◽  
K. Vinay ◽  
M. Arjun ◽  
P. K. Manoj
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
Oxide Thin Film ◽  
Coating Technique ◽  
Dip Coating Technique

Solar-Water-Splitting BiVO4 Thin-Film Photoanodes Prepared By Using a Sol-Gel Dip-Coating Technique

ChemPhotoChem ◽  
2017 ◽  
Vol 1 (6) ◽  
pp. 273-280 ◽  
Author(s):  
Samantha Hilliard ◽  
Dennis Friedrich ◽  
Stéphane Kressman ◽  
Henri Strub ◽  
Vincent Artero ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Splitting ◽  
Sol Gel ◽  
Dip Coating ◽  
Solar Water ◽  
Coating Technique ◽  
Solar Water Splitting ◽  
Dip Coating Technique

scholarly journals Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

2019 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Susilawati Susilawati ◽  
Aris Doyan ◽  
Lalu Muliyadi ◽  
Syamsul Hakim
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Technique ◽  
Oxide Thin Film ◽  
Coating Technique ◽  
Materials Used ◽  
Film Making

Abstract: The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide

Structural and optical properties of molybdenum oxide thin films prepared by the dip coating technique

2021 ◽  
Author(s):  
Danial Ahmad; M. Amer Khan ◽  
Arslan Mehmood; Amjad Sohail; S. S. Ali Gillani
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Molybdenum Oxide ◽  
Dip Coating ◽  
Oxide Thin Film ◽  
Visible Spectroscopy ◽  
Structural And Optical Properties ◽  
Coating Technique ◽  
Uv Visible ◽  
Dip Coating Technique

Due to excellent structural and optical properties of molybdenum oxide (MoO, MoO2 and MoO3) were preferred in multiple applications such as gas sensing solar cell, optoelectronics devices and medical physics. The present study was related to synthesis of molybdenum oxide thin film via dip coating technique and the film was characterised by using various characterisation techniques such as XRD, SEM and UV-visible spectroscopy. The monoclinic crystal structure and the crystallite size (29.16~52.77) was investigated by XRD analysis. Moreover, SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibit the maximum absorption in ultra-violet region and band gap decrease (3.05 to 2.55 eV) with increased the oxide radical in molybdenum thin film. The present results suggest that the series of molybdenum oxide (MoO, MoO2 and MoO3) improved the structural and optical properties which make it a good candidate for photocatalytic activity.

Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

2013 ◽  
Vol 334-335 ◽  
pp. 349-352
Author(s):  
N. Baydogan ◽  
Y. Gokce ◽  
Murat Baydogan ◽  
Huseyin Cimenoglu
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Capacitance Voltage ◽  
Abrupt Interface ◽  
P Type ◽  
Dip Coating Technique ◽  
Si Wafer

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

The Optical and Electrical Properties of Antimony-Doped Tin Oxide Transparent Conducting Thin Films Prepared by Sol-Gel Dip-Coating Technique

2007 ◽  
Vol 336-338 ◽  
pp. 754-757
Author(s):  
Dao Li Zhang ◽  
Zhi Bing Deng ◽  
Jian Bing Zhang ◽  
Liang Yan Chen
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Dip Coating ◽  
Rutile Structure ◽  
Coating Technique ◽  
Transparent Conducting ◽  
Glass Slides ◽  
Dip Coating Technique

Antimony-doped tin oxide (ATO) transparent conducting thin films were prepared by sol-gel dip-coating technique in the alcohol solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. Usual glass slides (25×76×1mm3) were used as the substrates. As-prepared thin films were dried at temperature of 343K and annealed at temperatures of 673~823K. Their optical properties were analyzed by Hitachi U-3310 spectrophotometer. The good optical transmission of the ATO thin films has been obtained as high as 80%-90% in visible region by the optimization of deposition conditions, but decreased substantially in IR region. From the X-ray diffraction (XRD) measurements, it showed that ATO films had the similar structures with the pure tin oxide films, i.e. tetragonal rutile structure, despite of some rhombic SnO crystals. We analyzed the transmittance in the visible region depending on the vary Sb doped level, temperature, and dip-coating times. The sheet resistance of the investigated thin films was determined by four-probe method, showing that it was about 85-1009/□, which decreased with the increase of antimony doped concentration.

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