AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility

2007 ◽  
Vol 123 (2) ◽  
pp. 740-748 ◽  
Author(s):  
I. Cimalla ◽  
F. Will ◽  
K. Tonisch ◽  
M. Niebelschütz ◽  
V. Cimalla ◽  
...  
Keyword(s):  
Surface Properties ◽  
Device Processing ◽  
Processing Steps

Low Temperature Device Processing Technology for II-VI Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
R.M. Kolbas ◽  
B.P. Sneed ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Layers ◽  
Processing Technologies ◽  
Device Processing ◽  
Device Structures ◽  
Lift Off ◽  
Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

2003 ◽  
Vol 764 ◽  
Author(s):  
Mark J. Yannuzzi ◽  
Neil A. Moser ◽  
Robert C. Fitch ◽  
Gregg H. Jessen ◽  
James K. Gillespie ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Low Field ◽  
Parametric Data ◽  
Device Processing ◽  
Field Mobility ◽  
Before And After ◽  
The Stability ◽  
Processing Steps ◽  
Process Annealing ◽  
Low Field Mobility

AbstractIn an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.

Interfacial Stability and Interdiffusion Examined at the Atomic Level

1989 ◽  
Vol 159 ◽  
Author(s):  
Y. Kim ◽  
A. Ourmazd ◽  
R.J. Malik ◽  
J.A. Rentschler
Keyword(s):  
Chemical Change ◽  
Atomic Plane ◽  
Atomic Level ◽  
Multilayered Structures ◽  
Single Interface ◽  
Device Processing ◽  
The Stability ◽  
Interdiffusion Coefficients ◽  
Processing Steps ◽  
Temperature Depth

ABSTRACTUsing chemical lattice imaging in combination with vector pattern recognition, we obtain quantitative profiles of the chemical change across single interfaces with atomic plane resolution. We thus study interdiffusiuon across single GaAs/AlGaAs interfaces as a function of temperature, depth of interface beneath the surface, and doping. Since our technique is sensitive to interdiffusion coefficients as small as 10−20 cm2/s, we can study atomic level changes at a single interface at the low temperatures used for many device processing steps (∼700C). Our results show interdiffusion, and hence the layer stability depend not only on temperature and doping, but also on the distance of the interface from the surface. The implications of these results for the stability of multilayered structures are discussed.

Biological and Surface Properties of C-Type Virus Particles Produced by Novikoff Ascites Hepatoma Cells

1977 ◽  
Vol 35 ◽  
pp. 388-389
Author(s):  
D.C. Hixson ◽  
J.C. Chan ◽  
J.M. Bowen ◽  
E.F. Walborg
Keyword(s):  
Surface Properties ◽  
Ricinus Communis ◽  
Rat Kidney ◽  
Leukemia Virus ◽  
Viral Envelope ◽  
Virus Particles ◽  
Chemically Induced ◽  
Sarcoma Virus ◽  
Hepatocarcinoma Cells ◽  
Type C

Several years ago Karasaki (1) reported the production of type C virus particles by Novikoff ascites hepatocarcinoma cells. More recently, Weinstein (2) has reported the presence of type C virus particles in cell cultures derived from transplantable and primary hepatocellular carcinomas. To date, the biological function of these virus and their significance in chemically induced hepatocarcinogenesis are unknown. The present studies were initiated to determine a possible role for type C virus particles in chemically induced hepatocarcinogenesis. This communication describes results of studies on the biological and surface properties of type C virus associated with Novikoff hepatocarcinoma cells.Ecotropic and xenotropic murine leukemia virus (MuLV) activity in ascitic fluid of Novikoff tumor-bearing rats was assayed in murine sarcoma virus transformed S+L- mouse cells and S+L- mink cells, respectively. The presence of sarcoma virus activity was assayed in non-virus-producing normal rat kidney (NRK) cells. Ferritin conjugates of concanavalin A (Fer-Con wheat germ agglutinin (Fer-WGA), and Ricinus communis agglutinins I and II (Fer-RCAI and Fer-RCAII) were used to probe the structure and topography of saccharide determinants present on the viral envelope.

Inelastic scattering at surfaces and interfaces

1986 ◽  
Vol 44 ◽  
pp. 392-393
Author(s):  
R. H. Ritchie ◽  
A. Howie
Keyword(s):  
Inelastic Scattering ◽  
Surface Properties ◽  
Correlation Energy ◽  
Condensed Matter ◽  
Charged Particles ◽  
Condensed Matter Physics ◽  
Optical Phonons ◽  
Exchange Correlation ◽  
Surfaces And Interfaces ◽  
Inelastic Interactions

An important part of condensed matter physics in recent years has involved detailed study of inelastic interactions between swift electrons and condensed matter surfaces. Here we will review some aspects of such interactions.Surface excitations have long been recognized as dominant in determining the exchange-correlation energy of charged particles outside the surface. Properties of surface and bulk polaritons, plasmons and optical phonons in plane-bounded and spherical systems will be discussed from the viewpoint of semiclassical and quantal dielectric theory. Plasmons at interfaces between dissimilar dielectrics and in superlattice configurations will also be considered.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

Contribution of Arena Surface Properties to Equine Forelimb Fetlock Motion while Jumping

2020 ◽  
Author(s):  
Rohlf CM ◽  
Garcia TC ◽  
Marsh LJ ◽  
Fyhrie DP ◽  
le Jeune SS ◽  
...  
Keyword(s):  
Surface Properties
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