Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices

2020 ◽  
Vol 174 ◽  
pp. 87-90 ◽  
Author(s):  
Kang Wang ◽  
Kun Ruan ◽  
Wenbo Hu ◽  
Shengli Wu ◽  
Hongxing Wang
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

(Invited) High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

2019 ◽  
Vol 41 (8) ◽  
pp. 19-30 ◽  
Author(s):  
Matthew J. Marinella ◽  
Stanley Atcitty ◽  
Sandeepan DasGupta ◽  
Robert J. Kaplar ◽  
Mark A. Smith
Keyword(s):  
High Power ◽  
State Of The Art ◽  
Semiconductor Devices ◽  
Advanced Materials ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Current State
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