Damage-free polishing of monocrystalline silicon wafers without chemical additives

2008 ◽  
Vol 59 (11) ◽  
pp. 1178-1181 ◽  
Author(s):  
A.Q. Biddut ◽  
L.C. Zhang ◽  
Y.M. Ali ◽  
Z. Liu
Keyword(s):  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Chemical Additives

Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

2021 ◽  
pp. 095440622098384
Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Flow Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Slurry Flow ◽  
Magnetorheological Finishing ◽  
Finishing Process ◽  
Process Factors ◽  
Slurry Flow Rate

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

The impact of damage etching on fracture strength of diamond wire sawn monocrystalline silicon wafers for photovoltaics use

2018 ◽  
Vol 57 (12) ◽  
pp. 126501 ◽  
Author(s):  
Halubai Sekhar ◽  
Tetsuo Fukuda ◽  
Yasuhiro Kida ◽  
Katsuto Tanahashi ◽  
Hidetaka Takato
Keyword(s):  
Fracture Strength ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Diamond Wire ◽  
The Impact

Degradation of Surface Passivation and Bulk in p-Type Monocrystalline Silicon Wafers at Elevated Temperature

2019 ◽  
Vol 9 (1) ◽  
pp. 97-105 ◽  
Author(s):  
Kyung Kim ◽  
Ran Chen ◽  
Daniel Chen ◽  
Phillip Hamer ◽  
Alison Ciesla nee Wenham ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Surface Passivation ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
P Type

scholarly journals Defect detection in monocrystalline silicon wafers using high frequency guided waves

2019 ◽  
Author(s):  
Bernard Masserey ◽  
Mathieu Simon ◽  
Jean-Luc Robyr ◽  
Paul Fromme
Keyword(s):  
Defect Detection ◽  
High Frequency ◽  
Guided Waves ◽  
Silicon Wafers ◽  
Monocrystalline Silicon

TEM structural characterization of Sn–Te–O thin films on monocrystalline silicon wafers

2003 ◽  
Vol 441 (1-2) ◽  
pp. 25-31 ◽  
Author(s):  
L.I Popova ◽  
S.K Peneva ◽  
C.A Dimitriadis ◽  
V.K Gueorguiev ◽  
S.K Andreev
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Silicon Wafers ◽  
Monocrystalline Silicon
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