scholarly journals Effect of the depth base along the vertical on the electrical parameters of a vertical parallel silicon solar cell in open and short circuit

2018 ◽  
Vol 8 ◽  
pp. 257-261
Author(s):  
Gokhan Sahin ◽  
Genber Kerimli
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Electrical Parameters

scholarly journals Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Tchouadep Guy Serge ◽  
Zouma Bernard ◽  
Korgo Bruno ◽  
Soro Boubacar ◽  
Savadogo Mahamadi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Experimental Studies ◽  
High Energy ◽  
High Energy Particle ◽  
Proton Radiation ◽  
Electrical Parameters ◽  
Carrier Distribution

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

scholarly journals Investigations on the Outdoor Performance Characteristics of Multicrystalline Silicon Solar Cell and Module

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Sivakumar Parthasarathy ◽  
P. Neelamegam ◽  
P. Thilakan ◽  
N. Tamilselvan
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Critical Value ◽  
Standard Test ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
In Series

Multicrystalline silicon solar cell and its module with 18 cells connected in series were mounted on an inclined rack tilted 12° South positioned at latitude of 12.0107° and longitude of 79.856°. Corresponding solar irradiance was measured using an optical Pyranometer. Measured irradiance, open circuit voltage (), and short circuit current () values were analyzed. values of both the cell and module were found saturated at above the critical value of illuminations which were different from each other. The integrated daily efficiency for the cell and module were ~10.25% and ~9.39%, respectively, that were less than their respective standard test condition’s value. The reasons for this drop in efficiencies were investigated and reported.

Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

2011 ◽  
Vol 399-401 ◽  
pp. 1477-1480
Author(s):  
Yan Li Xu ◽  
Jin Hua Li
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Ion Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Textured Surface ◽  
Si Solar Cell ◽  
The One ◽  
P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

scholarly journals Effects of the Boron-Doped p+Emitter on the Efficiency of the n-Type Silicon Solar Cell

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Eun-Young Kim ◽  
Jeong Kim
Keyword(s):  
Solar Cell ◽  
Contact Resistance ◽  
Doping Level ◽  
Silicon Solar Cell ◽  
Doping Concentration ◽  
Boron Concentration ◽  
Short Circuit ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Type Silicon

The optimum structure of the p+emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB) in the p+emitter was varied in the range of1×1017and2×1022 atoms/cm3while maintaining the base doping concentration at2×1016 atoms/cm3. With the increase of the boron concentration, the open circuit voltage (VOC) of the cell increased up to 0.525 V and then was nearly saturated atNB>5×1018 atoms/cm3. On the other hand, the short circuit current density (JSC) began to decrease atNB>1×1019 atoms/cm3due to the increase of the surface recombination loss, and without considering the variation of the contact resistance along the emitter doping level, the maximum efficiency of the cell was obtained at aroundNB=5×1018 atoms/cm3. While the contact resistance of the electrode decreases with the increase of the doping concentration in the p+emitter, and with consideration of the variation of the contact resistance, the optimum value ofNBfor maximum efficiency shifted to the higher doping level.

Sign in / Sign up

Export Citation Format

Share Document