Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

2013 ◽  
Vol 377 (37) ◽  
pp. 2432-2435 ◽  
Author(s):  
V. Senthilkumar ◽  
A. Kathalingam ◽  
S. Valanarasu ◽  
V. Kannan ◽  
Jin-Koo Rhee
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Memory Applications

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Enhanced resistive switching in graphene oxide based composite thin film for nonvolatile memory applications

2019 ◽  
Vol 6 (10) ◽  
pp. 105621 ◽  
Author(s):  
Rakesh Singh ◽  
Ravi Kumar ◽  
Anil Kumar ◽  
Dinesh Kumar ◽  
Mukesh Kumar
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Composite Thin Film ◽  
Memory Applications
Sign in / Sign up

Export Citation Format

Share Document