Density of states of a strongly correlated quantum dot coupled to Luttinger liquid leads

2013 ◽  
Vol 377 (9) ◽  
pp. 687-693 ◽  
Author(s):  
Kai-Hua Yang ◽  
Yang Chen ◽  
Huai-Yu Wang ◽  
Bei-Yun Liu
Keyword(s):  
Quantum Dot ◽  
Density Of States ◽  
Luttinger Liquid ◽  
Strongly Correlated

The shot noise of a strongly correlated quantum dot coupled to the Luttinger liquid leads

2014 ◽  
Vol 378 (42) ◽  
pp. 3136-3143 ◽  
Author(s):  
Kai-Hua Yang ◽  
Xian He ◽  
Huai-Yu Wang ◽  
Kai-Di Liu ◽  
Bei-Yun Liu
Keyword(s):  
Quantum Dot ◽  
Shot Noise ◽  
Luttinger Liquid ◽  
Strongly Correlated

The photon-assisted shot noise of a strongly correlated quantum dot coupled to the Luttinger liquid leads

2020 ◽  
Vol 115 ◽  
pp. 113642
Author(s):  
Kai-Hua Yang ◽  
Yong-Xi Dai ◽  
Xu Wang ◽  
Huai-Yu Wang ◽  
Shao-Shuai Miao
Keyword(s):  
Quantum Dot ◽  
Shot Noise ◽  
Luttinger Liquid ◽  
Strongly Correlated

Effects of a scattering center on the ground-state energy of quantum-dot lithium

2017 ◽  
Vol 31 (07) ◽  
pp. 1750071
Author(s):  
Z. D. Vatansever ◽  
S. Sakiroglu ◽  
I. Sokmen
Keyword(s):  
Quantum Dot ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Electronic Charge ◽  
Strongly Correlated ◽  
Configuration Interaction Method ◽  
Charge Localization ◽  
Scattering Center ◽  
Spin Properties

In this paper, the effects of a repulsive scattering center on the ground-state energy and spin properties of a three-electron parabolic quantum dot are investigated theoretically by means of configuration interaction method. Phase transition from a weakly correlated regime to a strongly correlated regime is examined from several strengths and positions of Gaussian impurity. Numerical results reveal that the transition from spin-1/2 to spin-3/2 state depends strongly on the location of the impurity which accordingly states the controllability of the spin polarization. Moreover, broken circular symmetry results in more pronounced electronic charge localization.

Effect of quantum dot shape dispersion on their joint density of states

2011 ◽  
Vol 37 (5) ◽  
pp. 431-434
Author(s):  
A. E. Krasnok ◽  
V. P. Dzyuba ◽  
Yu. N. Kul’chin
Keyword(s):  
Quantum Dot ◽  
Density Of States ◽  
Joint Density

scholarly journals Quantum dot at a Luttinger liquid edge

2017 ◽  
Vol 96 (11) ◽  
Author(s):  
Colin Rylands ◽  
Natan Andrei
Keyword(s):  
Quantum Dot ◽  
Luttinger Liquid

Nonequilibrium Density of State of a Kondo Dot Coupled to Luttinger Liquid

2012 ◽  
Vol 622-623 ◽  
pp. 1826-1829
Author(s):  
Kai Hua Yang ◽  
Yang Chen ◽  
Bei Yun Liu ◽  
Xian He
Keyword(s):  
Density Of States ◽  
Bias Voltage ◽  
Strong Interaction ◽  
Luttinger Liquid ◽  
Equation Of Motion ◽  
Green Functions ◽  
Zero Temperature ◽  
Density Of State ◽  
Weakly Coupled ◽  
Kondo Physics

We theoretically investigate the nonequilibrium density of states (DOS) of a Kondo dot weakly coupled to Luttinger liquid leads by using the equation-of-motion technique of non-equilibrium Green functions. The joint effects of large bias voltage and moderately strong intralead interactions results in nontrivial modifications of the Kondo peak in the DOS. The DOS exhibits a two-channel Kondo physics for moderately strong interaction in the leads at zero temperature.

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
Density Of States ◽  
Active Layer ◽  
Cell Structure ◽  
Indium Nitride ◽  
Effective Density ◽  
Intrinsic Carrier Concentration ◽  
Solar Cell Structure

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

scholarly journals Variation of Energy Density of States in Quantum Dot Arrays due to Interparticle Electronic Coupling

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1855-1860 ◽  
Author(s):  
Manca Logar ◽  
Shicheng Xu ◽  
Shinjita Acharya ◽  
Fritz B. Prinz
Keyword(s):  
Energy Density ◽  
Quantum Dot ◽  
Density Of States ◽  
Electronic Coupling
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