scholarly journals Density of states of a dissipative quantum dot coupled to a quantum wire

2010 ◽  
Vol 82 (23) ◽  
Author(s):  
Moshe Goldstein ◽  
Richard Berkovits
Keyword(s):  
Quantum Dot ◽  
Density Of States ◽  
Quantum Wire

scholarly journals Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

2015 ◽  
Vol 117 (16) ◽  
pp. 164313 ◽  
Author(s):  
Stefano T. Moroni ◽  
Valeria Dimastrodonato ◽  
Tung-Hsun Chung ◽  
Gediminas Juska ◽  
Agnieszka Gocalinska ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Wire ◽  
Patterned Substrates

Effect of quantum dot shape dispersion on their joint density of states

2011 ◽  
Vol 37 (5) ◽  
pp. 431-434
Author(s):  
A. E. Krasnok ◽  
V. P. Dzyuba ◽  
Yu. N. Kul’chin
Keyword(s):  
Quantum Dot ◽  
Density Of States ◽  
Joint Density

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
Density Of States ◽  
Active Layer ◽  
Cell Structure ◽  
Indium Nitride ◽  
Effective Density ◽  
Intrinsic Carrier Concentration ◽  
Solar Cell Structure

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

scholarly journals Variation of Energy Density of States in Quantum Dot Arrays due to Interparticle Electronic Coupling

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1855-1860 ◽  
Author(s):  
Manca Logar ◽  
Shicheng Xu ◽  
Shinjita Acharya ◽  
Fritz B. Prinz
Keyword(s):  
Energy Density ◽  
Quantum Dot ◽  
Density Of States ◽  
Electronic Coupling
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