scholarly journals Variation of Energy Density of States in Quantum Dot Arrays due to Interparticle Electronic Coupling

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1855-1860 ◽  
Author(s):  
Manca Logar ◽  
Shicheng Xu ◽  
Shinjita Acharya ◽  
Fritz B. Prinz
Keyword(s):  
Energy Density ◽  
Quantum Dot ◽  
Density Of States ◽  
Electronic Coupling

scholarly journals Vacancy-Induced Low-Energy Density of States in the Kitaev Spin Liquid

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Wen-Han Kao ◽  
Johannes Knolle ◽  
Gábor B. Halász ◽  
Roderich Moessner ◽  
Natalia B. Perkins
Keyword(s):  
Energy Density ◽  
Density Of States ◽  
Low Energy ◽  
Spin Liquid

Effect of quantum dot shape dispersion on their joint density of states

2011 ◽  
Vol 37 (5) ◽  
pp. 431-434
Author(s):  
A. E. Krasnok ◽  
V. P. Dzyuba ◽  
Yu. N. Kul’chin
Keyword(s):  
Quantum Dot ◽  
Density Of States ◽  
Joint Density

scholarly journals Electronic Coupling and Exciton Energy Transfer in CdTe Quantum-Dot Molecules [J. Am. Chem. Soc.2006,128, 10436−10441].

2007 ◽  
Vol 129 (34) ◽  
pp. 10613-10613 ◽  
Author(s):  
Rolf Koole ◽  
Peter Liljeroth ◽  
Celso de Mello Donegá ◽  
Daniël Vanmaekelbergh ◽  
Andries Meijerink
Keyword(s):  
Energy Transfer ◽  
Quantum Dot ◽  
Electronic Coupling ◽  
Exciton Energy ◽  
Quantum Dot Molecules ◽  
Cdte Quantum Dot

scholarly journals Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Materials ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 1739 ◽  
Author(s):  
Kyungsoo Jang ◽  
Youngkuk Kim ◽  
Joonghyun Park ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Energy Density ◽  
Excimer Laser ◽  
Density Of States ◽  
Silicon Germanium ◽  
Structural Characteristics ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Starting Point

We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH4 and GeH4 gas mixture, and a Si1−xGex thin film was crystallized using different excimer laser densities. We found that the optimum energy density to obtain maximum grain size depends on the Ge content in the poly-Si1−xGex thin film; we also confirmed that the grain size of the poly-Si1−xGex thin film is more sensitive to energy density than the poly-Si thin film. The maximum grain size of the poly-Si1−xGex film was 387.3 nm for a Ge content of 5.1% at the energy density of 420 mJ/cm2. Poly-Si1−xGex TFT with different Ge concentrations was fabricated, and their structural characteristics were analyzed using Raman spectroscopy and atomic force microscopy. The results showed that, as the Ge concentration increased, the electrical characteristics, such as on current and sub-threshold swing, were deteriorated. The electrical characteristics were simulated by varying the density of states in the poly-Si1−xGex. From this density of states (DOS), the defect state distribution connected with Ge concentration could be identified and used as the basic starting point for further analyses of the poly-Si1−xGex TFTs.

scholarly journals Collective electron ferromagnetism II. Energy and specific heat

1939 ◽  
Vol 169 (938) ◽  
pp. 339-371 ◽  
Keyword(s):  
Energy Density ◽  
Specific Heat ◽  
Interaction Energy ◽  
Electron Energy ◽  
Density Of States ◽  
Energy Band ◽  
Standard Form ◽  
Magnetic Characteristics ◽  
Square Root ◽  
Dependent Part

A treatment of collective electron ferromagnetism on the basis of FermiDirac statistics was developed in a previous paper (Stoner 1938 a , referred to as I). The problem considered was that of the magnetic characteristics associated with electrons in an energy band of standard form (in which the energy density of states is proportional to the square root of the energy), and subject to interchange interaction effects which involve dependence of the energy on the magnetization. The distribution of states is specified by a parameter e 0 , giving the maximum electron energy at absolute zero in the absence of the magnetization dependent part of the interchange interaction energy.

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