Three−dimensional lattice rotation in GaAs nanowire growth on hydrogen−silsesquioxane covered GaAs (001) using molecular beam epitaxy

2018 ◽  
Vol 99 ◽  
pp. 58-62 ◽  
Author(s):  
Dat Q. Tran ◽  
Huyen T. Pham ◽  
Koichi Higashimine ◽  
Yoshifumi Oshima ◽  
Masashi Akabori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Lattice Rotation ◽  
Nanowire Growth ◽  
Hydrogen Silsesquioxane ◽  
Dimensional Lattice ◽  
Gaas Nanowire

Observation of self-assisted GaAs nanowire growth by molecular beam epitaxy on GaAs (1 1 1)B without SiO2layer

2017 ◽  
Vol 4 (9) ◽  
pp. 095016 ◽  
Author(s):  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan ◽  
Piyasan Praserthdam ◽  
Chiraporn Tongyam
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Growth ◽  
Gaas Nanowire

Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

2015 ◽  
Vol 119 (35) ◽  
pp. 20721-20727 ◽  
Author(s):  
Chen Zhou ◽  
Kun Zheng ◽  
Zhenyu Lu ◽  
Zhi Zhang ◽  
Zhiming Liao ◽  
...  
Keyword(s):  
Quality Control ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowire

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

2011 ◽  
Vol 1315 ◽  
Author(s):  
H.Y. Liu ◽  
V. Avrutin ◽  
N. Izyumskaya ◽  
M.A. Reshchikov ◽  
S. Wolgast ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Optical Transmittance ◽  
Growth Conditions ◽  
Visible Spectral Range ◽  
Light Emitting ◽  
Surface Morphologies

Abstract:We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

2012 ◽  
Vol 45 (5) ◽  
pp. 1046-1053 ◽  
Author(s):  
Wen Hu ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Miwa Kozu ◽  
Masamitu Takahasi
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Real Time ◽  
High Speed ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

2008 ◽  
Vol 42 (12) ◽  
pp. 1445-1449 ◽  
Author(s):  
Yu. B. Samsonenko ◽  
G. É. Cirlin ◽  
V. A. Egorov ◽  
N. K. Polyakov ◽  
V. P. Ulin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Surfaces ◽  
Gaas Nanowire
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