Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

2015 ◽  
Vol 119 (35) ◽  
pp. 20721-20727 ◽  
Author(s):  
Chen Zhou ◽  
Kun Zheng ◽  
Zhenyu Lu ◽  
Zhi Zhang ◽  
Zhiming Liao ◽  
...  
Keyword(s):  
Quality Control ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowire

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

2008 ◽  
Vol 42 (12) ◽  
pp. 1445-1449 ◽  
Author(s):  
Yu. B. Samsonenko ◽  
G. É. Cirlin ◽  
V. A. Egorov ◽  
N. K. Polyakov ◽  
V. P. Ulin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Surfaces ◽  
Gaas Nanowire

scholarly journals Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy

1998 ◽  
Vol 12 (11) ◽  
pp. 1147-1170 ◽  
Author(s):  
Ralf D. Tscheuschner ◽  
Sascha Hoch ◽  
Eva Leschinsky ◽  
Cedrik Meier ◽  
Sabine Theis ◽  
...  
Keyword(s):  
Quality Control ◽  
Numerical Analysis ◽  
Molecular Beam Epitaxy ◽  
Quantum Hall Effect ◽  
Molecular Beam ◽  
Quantum Hall ◽  
Large Samples ◽  
Versus Sample ◽  
Van Der Pauw ◽  
Control Management

We measure the IQHE on macroscopic (1.5 cm × 1.5 cm) "quick and dirty" prepared III–V heterostructure samples with van der Pauw and modified Corbino geometries at 1.3 K. We compare our results with (i) data taken on smaller specimens, among them samples with a standard Hall bar geometry, (ii) results of our numerical analysis taking inhomogenities of the 2DEG into account. Our main finding is a confirmation of the expected robustness of the IQHE which favors the development of wide plateaux for small filling factors and very large samples sizes (here with areas 10 000 times larger than in standard arrangements).

scholarly journals Маска на основе эпитаксиального слоя Si для самокаталитического роста нитевидных нанокристаллов на подложках GaAs (111)B и (100)

2020 ◽  
Vol 46 (4) ◽  
pp. 11
Author(s):  
Е.А. Емельянов ◽  
А.Г. Настовьяк ◽  
М.О. Петрушков ◽  
М.Ю. Есин ◽  
Т.А. Гаврилова ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Layer ◽  
Vacuum System ◽  
Epitaxial Silicon ◽  
Spectral Ellipsometry ◽  
Single Wave ◽  
Force Microscopy ◽  
Epitaxial Silicon Layer ◽  
Gaas Nanowire

GaAs nanowire (NW) self-catalyzed growth on GaAs (111) B and GaAs (100) substrates was carried out by molecular beam epitaxy. A mask for the self-catalyzed NW growth was created by oxidizing an epitaxial silicon layer grown on the GaAs surface by molecular beam epitaxy (MBE). Silicon oxidation was realized in an atmosphere of purified air under normal conditions without moving the structures out from the vacuum system volume of the molecular beam epitaxy chamber. The oxidation process of a silicon layer was studied using single-wave and spectral ellipsometry and the surface morphology of oxidized silicon was studied by atomic force microscopy. Substrates with NWs were studied by scanning electron microscopy. The NW density was demonstrated to be 2.6•107 cm-2 and 3•107 cm-2 for (111)B and (100), respectively.

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

2006 ◽  
Vol 17 (16) ◽  
pp. 4025-4030 ◽  
Author(s):  
M Tchernycheva ◽  
J C Harmand ◽  
G Patriarche ◽  
L Travers ◽  
G E Cirlin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Conditions ◽  
Gaas Nanowire

Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy

2002 ◽  
Vol 81 (27) ◽  
pp. 5177-5179 ◽  
Author(s):  
Z. H. Wu ◽  
X. Y. Mei ◽  
D. Kim ◽  
M. Blumin ◽  
H. E. Ruda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Gaas Nanowire

Suppression of surface nanocrystal nucleation in growth of GaAs nanowire on Si(111) by molecular beam epitaxy

2011 ◽  
Author(s):  
J. Kwoen ◽  
N. Kumagai ◽  
K. Watanabe ◽  
S. Ohkouchi ◽  
S. Iwamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowire
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