Influence of dielectric substrate modification and deposition temperature on structure and morphology of CuPc thin films: X-ray reflectivity and angle dependent NEXAFS study

2017 ◽  
Vol 93 ◽  
pp. 39-45
Author(s):  
Sumona Sinha ◽  
C.-H. Wang ◽  
M. Mukherjee
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Dielectric Substrate ◽  
X Ray ◽  
Structure And Morphology ◽  
Substrate Modification

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Morphological and structural properties of high quality YBCO thin films

1995 ◽  
Vol 10 (1) ◽  
pp. 11-17 ◽  
Author(s):  
A. Cassinese ◽  
A. Di Chiara ◽  
F. Miletto Granozio ◽  
S. Saiello ◽  
U. Scotti di Uccio ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Growth Dynamics ◽  
Critical Currents ◽  
X Ray Diffraction ◽  
High Quality ◽  
Cylindrical Magnetron ◽  
X Ray ◽  
Gibbs Energies ◽  
Ybco Thin Films

High-quality YBCO thin films have been grown by Inverted Cylindrical Magnetron Sputtering (ICMS) on LaAlO3(100), SrTiO3(100), SrTiO3(110), and MgO(100) substrates. Transition temperatures of c-axis films exceed 90 K, and transition widths are within 1 K. Critical currents range up to 5 × 106 A/cm2 at 77 K. Structural and morphological features analyzed by x-ray diffraction and scanning electron microscopy, respectively, are found to be strongly dependent on film orientation and deposition temperature. In order to understand such dependence, a simple interpretation is proposed in terms of Gibbs energies and growth dynamics of the nucleation process.

CVD of Thin Films of Copper and Cobalt from Different Precursors: Growth Kinetics and Microstructure

2000 ◽  
Vol 614 ◽  
Author(s):  
Anil Mane ◽  
K. Shalini ◽  
Anjana Devi ◽  
R. Lakshmi ◽  
M.S. Dharmaprakash ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Film Growth ◽  
Growth Parameters ◽  
Metal Films ◽  
X Ray ◽  
Cu Films ◽  
Bulk Electrical Conductivity ◽  
Film Microstructure ◽  
Reactor Pressure

ABSTRACTWe have investigated the growth of thin films of Cu and Co by CVD using the β-diketonate complexes of the metals, viz., the respective acetylacetonates, dipivaloylmethanates, and ketocarboxylates. Film growth rate was measured as a function of CVD parameters such as substrate temperature and reactor pressure. Film microstructure was examined by optical microscopy, XRD, SEM, and STM. Electrical resistivity was measured as a function of temperature and film thickness. It was found that film microstructure is a function of the molecular structure of the precursor and of the other growth parameters. For example, Cu films from Cu(II) ethylacetoacetate comprise uniform, fine grains which result in bulk electrical conductivity at a thickness as small as 75nm. Though grown under nearly the same conditions, Cu films from Cu(II) dipivaloylmethanate are porous, with faceted, large crystallites. Cobalt films from Co(II) acetylacetonate are x-ray amorphous even at a deposition temperature of 450°C. It is possible, by choosing CVD parameters, to obtain metal films with microstructures appropriate to devices and to structures of very small dimensions.

Surface Structure and Morphology of SrBi2Ta2O9 (SBT) Thin Films

1996 ◽  
Vol 440 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzki ◽  
Richard A. Stall ◽  
Chien-Hsiung Peng ◽  
Yongfei Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Surface Structure ◽  
Grain Growth ◽  
Phase Formation ◽  
Deposition Temperature ◽  
Electric Properties ◽  
Step Process ◽  
Structure And Morphology ◽  
Structure Morphology

AbstractSrBi2Ta2O9 (SBT) films have been prepared by MOCVD processes. The phase formation, surface structure, morphology and surface roughness of SBT films on Pt/Ti/SiO2/Si wafers were measured by XRD, SEM, AFM and ellipsometry. It was found that amorphous SBT formed below 500°C, amorphous and polycrystalline growth occurred successively between 500°C and 650°C. The surface roughness of the SBT thin films also increased with increasing deposition temperature. The AFM results showed the nucleation of SBT started by island formation, then continued across the surface of substrates at lower deposition temperatures. When the SBT film was deposited at higher temperatures, the nucleation and grain growth occurred at the same time, resulting in an inhomogencous structure and much higher surface roughness. Therefore, a two step process is used to improve surface roughness and interface mismatch between film and substrate. In addition, the relationships between surface structure, morphology and the electric properties of SBT thin films were also investigated.

scholarly journals Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

2012 ◽  
Vol 3 ◽  
pp. 438-443 ◽  
Author(s):  
Anayara Begum ◽  
Amir Hussain ◽  
Atowar Rahman
Keyword(s):  
Thin Films ◽  
Dislocation Density ◽  
Optical Absorption ◽  
Crystallite Size ◽  
Lattice Constant ◽  
Deposition Temperature ◽  
Structural Parameters ◽  
Lead Selenide ◽  
Complexing Agent ◽  
X Ray

Nanocrystalline lead selenide (PbSe) thin films were prepared on glass substrates by a chemical bath deposition method, using sodium selenosulfate (Na2SeSO3) as a source of Se2− ions, and lead acetate as a source of Pb2+ ions. Trisodium citrate (TSC) was used as a complexing agent. PbSe films were prepared at various deposition temperatures while the pH value was kept fixed at 11, and the effect on the resulting film properties was studied by X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and optical absorption studies. The structural parameters, such as the lattice constant (a), crystallite size (D), dislocation density (ρ) and microstrain (ε) were evaluated from the XRD spectra. It was found that average crystallite size, as calculated from Scherrer’s formula, increased from 23 to 33 nm as the deposition temperature was varied from 303 to 343 K. The dislocation density and microstrain were found to vary inversely with the crystallite size, whereas the lattice constant was found to increase with an increase in crystallite size. The optical absorption spectra of the nanocrystalline PbSe films showed a blue shift, and the optical band gap (E g ) was found to increase from 1.96 to 2.10 eV with the decrease in crystallite size.

Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 902-904 ◽  
Author(s):  
N. Seña ◽  
F. Mesa ◽  
A. Dussan ◽  
G. Gordillo
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Deposition Temperature ◽  
Mass Ratio ◽  
Electrical Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Stage Process

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

Influence of Sr-Doping on the Structure of LaCoO3 Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 231 ◽  
pp. 19-24 ◽  
Author(s):  
Agnieszka Kopia ◽  
Łukasz Cieniek ◽  
Kazimierz Kowalski ◽  
Jan Kusiński
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Morphology

The aim of the research was to investigate the influence of strontium on the structure thin films La1-x SrxCoO3 (x=0; 0.1, 0.2). The LaCoO3 and LaCoO3 doped by Sr films were grown by pulsed laser deposition (PLD) on Si [100] substrate using an Excimer KrF (= 248 nm). To characterize the structure and morphology of the thin films were used the SEM, AFM and XRD methods. X-Ray Diffraction analysis showed only LaCoO3 phase in the thin film not doped andLa0.1Sr0.9CoO3 and La0.2Sr0.8CoO3 phases in thin films doped by Sr. The crystallites size, calculated by Williamson-Hall plots, was smaller for films doped by Sr. The surface of the thin films was free from the drops. SEM analysis showed change of the shape of thin films as a result of doping by Sr. Highly developed layer surface was observed using the AFM microscope for thin films doped by Sr.

scholarly journals Effect of deposition temperature on structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition

2017 ◽  
Vol 35 (2) ◽  
pp. 329-334 ◽  
Author(s):  
V. Balasubramanian ◽  
P. Naresh Kumar ◽  
D. Sengottaiyan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Bath Deposition ◽  
Deposition Temperature ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Time Period ◽  
Hall Effect Measurements ◽  
C 50

Abstract The effect of deposition temperature on the structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition onto glass substrates at different deposition temperatures (40 °C, 50 °C, 60 °C and 70 °C) for 5 hours deposition time period was investigated. The obtained films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption spectra. All deposited films were polycrystalline and had an orthorhombic structure. Their grain size had changed with deposition temperature and their compositions were nearly stoichiometric. The optical band gap value was decreased from 2.44 eV to 2.33 eV with increasing the film thickness. Electrical parameters such as mobility and type of electrical conduction were determined from the Hall effect measurements. They showed that the obtained films have n-type conductivity and mobility values of the copper bismuth sulphide (CuBiS2) films have changed with deposition temperature.

Effects of LSCO Buffer Layer on the Microstructure and Dielectric Properties of Ba0.6Sr0.4TiO3 Films Prepared by Sol-gel Methods

2009 ◽  
Vol 1199 ◽  
Author(s):  
Songwei Han ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Bst Thin Films ◽  
Structure And Morphology ◽  
Bst Films

AbstractIn this work, Ba0.6Sr0.4TiO3(BST) thin films were deposited on Ti substrates using conductive La0.5Sr0.5CoO3 (LCSO) as buffer layers. Both BST and LSCO films were prepared by sol-gel methods. The structure and morphology of BST and LSCO films were analyzed by X-ray diffraction (XRD). XRD results show that both BST and LSCO films have perovskite structure with random orientation. The dielectric properties of BST films were dependent on the thickness of LSCO buffer layers. Upon using LSCO buffer layers, the dielectric properties of BST films were significantly improved. The dielectric constant, tunability, and dielectric loss of BST thin films for LSCO of 150 nm achieved about 453, 0.032 and 31.26% respectively.

scholarly journals Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 207-212 ◽  
Author(s):  
Ana Amaral ◽  
G. Lavareda ◽  
C. Nunes de Carvalho ◽  
V. André ◽  
Yuri Vygranenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Chemical Reactivity ◽  
X Ray ◽  
Ito Thin Films ◽  
Deposition Conditions

ABSTRACTIndium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Bé) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.

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