scholarly journals Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

2012 ◽  
Vol 3 ◽  
pp. 438-443 ◽  
Author(s):  
Anayara Begum ◽  
Amir Hussain ◽  
Atowar Rahman
Keyword(s):  
Thin Films ◽  
Dislocation Density ◽  
Optical Absorption ◽  
Crystallite Size ◽  
Lattice Constant ◽  
Deposition Temperature ◽  
Structural Parameters ◽  
Lead Selenide ◽  
Complexing Agent ◽  
X Ray

Nanocrystalline lead selenide (PbSe) thin films were prepared on glass substrates by a chemical bath deposition method, using sodium selenosulfate (Na2SeSO3) as a source of Se2− ions, and lead acetate as a source of Pb2+ ions. Trisodium citrate (TSC) was used as a complexing agent. PbSe films were prepared at various deposition temperatures while the pH value was kept fixed at 11, and the effect on the resulting film properties was studied by X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and optical absorption studies. The structural parameters, such as the lattice constant (a), crystallite size (D), dislocation density (ρ) and microstrain (ε) were evaluated from the XRD spectra. It was found that average crystallite size, as calculated from Scherrer’s formula, increased from 23 to 33 nm as the deposition temperature was varied from 303 to 343 K. The dislocation density and microstrain were found to vary inversely with the crystallite size, whereas the lattice constant was found to increase with an increase in crystallite size. The optical absorption spectra of the nanocrystalline PbSe films showed a blue shift, and the optical band gap (E g ) was found to increase from 1.96 to 2.10 eV with the decrease in crystallite size.

scholarly journals The Deposition Temperature Dependence on the Crystallite Size of NiO Thin Films

2020 ◽  
Vol 67 (1) ◽  
pp. 35-38 ◽  
Author(s):  
Said Benramache ◽  
Foued Chabane ◽  
Ali Arif
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Crystallite Size ◽  
Deposition Temperature ◽  
Structural Parameters ◽  
Lattice Parameter ◽  
Full Width ◽  
Half Maximum ◽  
Proposed Model ◽  
Crystallite Sizes

AbstractIn this article, we have investigated a fitting proposal model for calculating the crystallite size of pure NiO thin films by varying the structural parameters, such as full width at half-maximum β, lattice parameter a and differences in a − a0. The experimental data of NiO thin films were prepared at several deposition temperatures in the range of 380–460°C. All estimated values of crystallite sizes are proportional to the experimental data. Thus, the measurement of the crystallite size values by this proposed model is compatible with practical measurements qualitative.

Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

2012 ◽  
Vol 488-489 ◽  
pp. 76-81 ◽  
Author(s):  
Subramani Shanmugan ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Shape Analysis ◽  
Structural Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Studies ◽  
Sb Doping ◽  
Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

Preparation and Properties of CuInS2 Thin-Film by Successive Ionic Layer Adsorption and Reaction (SILAR) Method

2007 ◽  
Vol 280-283 ◽  
pp. 877-880
Author(s):  
Zheng Guo Jin ◽  
Yong Shi ◽  
Ji Jun Qiu ◽  
Xiao Xin Liu
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Optical Absorption ◽  
Optical Absorption Spectrum ◽  
Photoelectron Spectra ◽  
Molar Ratio ◽  
Silar Method ◽  
X Ray ◽  
Cuins2 Thin Films ◽  
Ionic Layer

CuInS2 thin films were deposited on galss substrate by successive ionic layer absorption and reaction (SILAR) method at room temperature. CuCl2, InCl3, and Na2S were used as precursor materials. The thin films were obtained during the dipping of 20-40 cycles and after annealing in the N2 atmosphere at 500°C. The characterization of the film was carried out by X-ray diffraction, scanning electron microscopy, optical absorption spectrum and X-ray photoelectron spectra. Quantification of the XPS peaks shows that the molar ratio of Cu:In:S of the film is close to the stoichiometry of CuInS2. XRD result demonstrated that the formed compound is CuInS2 with chalcopyrites crystal structure. Direct band gap was found to be 1.5eV from optical absorption spectrum.

SnO2:F Thin Films with High Fluorine Contents Produced by Spray Pyrolysis at Constant Substrate Temperature

1996 ◽  
Vol 441 ◽  
Author(s):  
D. R. Acosta ◽  
E. Zironi ◽  
W. Estrada ◽  
E. Montoya
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Structural Parameters ◽  
Final Concentration ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray

AbstractFluorine doped tin oxide thin films were prepared from solutions with high fluorine contents using the spray pyrolysis technique; the resulting films were studied by electron and X-ray diffraction methods; the resonant nuclear reaction (RNR) method was used to determine the final concentration of fluorine atoms in our films for different doping levels. Also, electrical and optical properties of SnO2:F films were measured and correlated with deposition and structural parameters obtained from X-Ray diffraction and electron microscopy studies.

Effect of Molarity on Structural and Optical Properties of Chemically Deposited Nanocrystalline PbS Thin Film

2017 ◽  
Vol 74 ◽  
pp. 22-35 ◽  
Author(s):  
Manash Pratim Sarma ◽  
G. Wary
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Bath Temperature ◽  
Ion Source ◽  
Complexing Agent ◽  
X Ray ◽  
Force Microscopy ◽  
Nanocrystallite Size ◽  
Atomic Force ◽  
Cbd Method

Thin films of PbS were deposited by chemical bath deposition (CBD) method under various molarities using lead acetate as Pb2+ ion source, thiourea as S2- ion source and ammonia as complexing agent at a fixed pH value of 9 under bath temperature of 333 K. Four different molarities of PbS thin films were prepared. The as-prepared films were characterized by using X-ray diffraction (XRD), X-ray fluorescence (XRF), EDX, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Parameters like crystallite size, lattice constant, microstrain, dislocation density were calculated. Optical constants such as extinction coefficient, absorption coefficient were measured from absorption spectra. Studies show that average nanocrystallite size increases from14.2 nm to 18.1 nm as the molarity of the film increases. Optical studies reveal the decrease of band gap from 1.75 eV to 1.44 eV with increasing molarity of the film indicating higher electrical conductivity of the films.

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

Dislocations, crystallite size, and planar faults in nanocrystalline ceria

2009 ◽  
Vol 24 (3) ◽  
pp. 228-233 ◽  
Author(s):  
S. R. Aghdaee ◽  
V. Soleimanian
Keyword(s):  
Grain Size ◽  
Dislocation Density ◽  
Crystallite Size ◽  
Cerium Oxide ◽  
Diffraction Line ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanocrystalline Ceria ◽  
Hall Plot

The modified Williamson–Hall and Warren–Averbach methods were used successfully for analyzing experimentally observed anisotropic X-ray diffraction line broadening and for determining reliable values of crystallite size and dislocation density in cerium oxide. The modified Williamson–Hall plot gives 22.3(2) nm for volume-weighted crystallite size, while the modified Warren–Averbach produces 18.0(2) nm for area-weighted grain size. The dislocation density and effective outer cut-off radius of dislocations obtained from the modified Warren–Averbach method are 1.8(3)×1015 m−2 and 15.5(1) nm, respectively.

scholarly journals Properties of Tin Monosulphide Films Grown by Chemical Bath Deposition

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Gedi Sreedevi ◽  
Kotte Tulasi Ramakrishna Reddy
Keyword(s):  
Band Gap ◽  
Chemical Bath Deposition ◽  
Structural Parameters ◽  
Bath Temperature ◽  
Optical Absorption Coefficient ◽  
Complexing Agent ◽  
Secondary Phases ◽  
Orthorhombic Crystal Structure ◽  
X Ray ◽  
Tin Chloride

Tin monosulphide (SnS) films have been successfully grown by a simple and low-cost wet chemical process, chemical bath deposition (CBD), using tin chloride and thioacetamide as precursors and tartaric acid as complexing agent. The layers were grown on glass substrate at different bath temperatures (Tb) that varied in the range 50–70°C. The energy dispersive X-ray analysis (EDAX) studies showed that all the grown films were nearly stoichiometric. The X-ray diffraction analysis indicated that the films had an intense peak at 31.6° that corresponds to the (111) plane of SnS and exhibited orthorhombic crystal structure. The intensity of (111) plane increases with the increase in bath temperature and became sharp at Tb=70°C, where the other crystal planes got suppressed, this indicates better crystallinity of the layers grown at this temperature. No other secondary phases of tin sulphide were observed. The structural parameters such as lattice constants and crystallite size were also calculated. The optical studies revealed that the layers had high optical absorption coefficient (>104 cm−1). The energy band gap was found to be allowed and direct and varied between 1.30 eV and 1.35 eV. The band gap decreased with the rise in bath temperature. The refractive index and the extinction coefficient were also evaluated. The details of these results will be presented and discussed.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Sign in / Sign up

Export Citation Format

Share Document