Spin-dependent tunneling through double-barrier quantum wells with random corrugation interfacial roughness

2011 ◽  
Vol 43 (9) ◽  
pp. 1579-1584 ◽  
Author(s):  
A.A. Shokri ◽  
ZH. Ebrahiminejad
Keyword(s):  
Quantum Wells ◽  
Double Barrier ◽  
Interfacial Roughness

Disorder effects on resonant tunneling in double-barrier quantum wells

1988 ◽  
Vol 38 (15) ◽  
pp. 10718-10723 ◽  
Author(s):  
P. A. Schulz ◽  
C. E. T. Gonçalves da Silva
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Disorder Effects

scholarly journals Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055024
Author(s):  
Edgar David Guarin Castro ◽  
Florian Rothmayr ◽  
Sebastian Krüger ◽  
Georg Knebl ◽  
Anne Schade ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier

SPIN FILTERING IN MAGNETIC HETEROSTRUCTURES

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3247-3252 ◽  
Author(s):  
D. O. Demchenko ◽  
A. N. Chantis ◽  
A. G. Petukhov
Keyword(s):  
Solid State ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Magnetic Films ◽  
Resonant Tunneling Diodes ◽  
Exchange Splitting ◽  
Double Barrier ◽  
Molecular Beam Epitaxial ◽  
Tunneling Diodes ◽  
Spin Filtering

Several techniques were proposed to achieve solid state spin filtering such as magnetic tunnel junctions comprised of half-metallic compounds or solid state Stern-Gerlach apparatus. Another alternative consists in using spin-dependent resonant tunneling through magnetically active quantum wells. Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs, GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly interesting to study spin-dependent resonant tunneling in double-barrier resonant tunneling diodes (RTD) with magnetic elements such as GaAs/AlAs/ErAs/AlAs/ErAs/AlAs/GaAs, GaxMn1-xAs/AlAs/GaAs/AlAs/GaAs, and GaAs/AlAs/GaxMn1-xAs/AlAs/GaAs. We present the results of our theoretical studies and computer simulations of transmission coefficients and current-voltage characteristics of resonant tunneling diodes based on these double-barrier structures. Resonant tunneling of holes (GaxMn1-xAs-based RTDs) is considered. Our approach is based on k·p perturbation theory with exchange splitting effects taken into account. We analyze exchange splitting of different resonant channels as a function of magnetization as well as spin polarization of the transmitted current as a function of bias. We found that resonant tunneling I – V characteristics of the double-barrier magnetic hererostructures strongly depend on the doping level in the emitter as well as on the orientation of the magnetization.

Atomic-scale observation of interfacial roughness and As–P exchange in InGaAs/InP multiple quantum wells

2004 ◽  
Vol 84 (22) ◽  
pp. 4436-4438 ◽  
Author(s):  
I. Yamakawa ◽  
R. Oga ◽  
Y. Fujiwara ◽  
Y. Takeda ◽  
A. Nakamura
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interfacial Roughness

Controlled type-I–type-II transition in GaAs/AlAs/AlxGa1−xAs double-barrier quantum wells

1997 ◽  
Vol 55 (4) ◽  
pp. 2393-2400 ◽  
Author(s):  
B. Chastaingt ◽  
M. Gurioli ◽  
P. Borri ◽  
M. Colocci ◽  
G. Neu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Double Barrier
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