Effect of a localized state inside the barrier on the temporal characteristics of electron tunneling in double-barrier quantum wells

1991 ◽  
Vol 44 (15) ◽  
pp. 8204-8209 ◽  
Author(s):  
Jin-feng Zhang ◽  
Ben-yuan Gu
Keyword(s):  
Quantum Wells ◽  
Electron Tunneling ◽  
Double Barrier ◽  
Temporal Characteristics ◽  
Localized State

Disorder effects on resonant tunneling in double-barrier quantum wells

1988 ◽  
Vol 38 (15) ◽  
pp. 10718-10723 ◽  
Author(s):  
P. A. Schulz ◽  
C. E. T. Gonçalves da Silva
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Disorder Effects

scholarly journals Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

2020 ◽  
Vol 49 (4) ◽  
pp. 2326-2331
Author(s):  
Ping Chen ◽  
Young Jae Park ◽  
Yuh-Shiuan Liu ◽  
Theeradetch Detchprohm ◽  
P. Douglas Yoder ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Effect ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Optimal Growth ◽  
State Density ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Localized State

AbstractThe thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping rate from a lower temperature for InGaN quantum wells (QWs) to a higher one for AlGaN quantum barriers (QBs) is intentionally changed from 1.0°C/s to 4.0°C/s. Atomic force microscopy images show that the surface morphology of InGaN QWs, which is improved by a thermal effect when the growth temperature rises to the set value of the AlGaN QBs, varies with different temperature ramping rates. The results of stimulated emission indicate that the threshold pumping power density of MQWs is decreased with increasing temperature ramping rate from 1.0°C/s to 3.0°C/s and then slightly increased when the ramping rate is 4.0°C/s. This phenomenon is believed to result from the thermal degradation effect during the temperature ramp step. A long-time high-temperature annealing will reduce the density of indium-rich microstructures as well as the corresponding localized state density, which is assumed to contribute to the radiative recombination in the InGaN QWs. Given the great difference between optimal growth temperatures for AlGaN and InGaN layers, a higher ramping rate would be more appropriate for the growth of ultraviolet AlGaN/InGaN MQWs.

The effect of scattering on electron tunneling mechanism in double barrier heterostructures

1990 ◽  
Vol 7 (1) ◽  
pp. 29-34 ◽  
Author(s):  
B.Y. Gu ◽  
C. Coluzza ◽  
M. Mangiantini ◽  
A. Frova
Keyword(s):  
Electron Tunneling ◽  
Double Barrier ◽  
Tunneling Mechanism

Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

1992 ◽  
Vol 45 (24) ◽  
pp. 14407-14410 ◽  
Author(s):  
M. Tewordt ◽  
L. Marti´n-Moreno ◽  
J. T. Nicholls ◽  
M. Pepper ◽  
M. J. Kelly ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Single Electron ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Single Electron Tunneling ◽  
Double Barrier Resonant Tunneling

scholarly journals Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055024
Author(s):  
Edgar David Guarin Castro ◽  
Florian Rothmayr ◽  
Sebastian Krüger ◽  
Georg Knebl ◽  
Anne Schade ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier

SPIN FILTERING IN MAGNETIC HETEROSTRUCTURES

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3247-3252 ◽  
Author(s):  
D. O. Demchenko ◽  
A. N. Chantis ◽  
A. G. Petukhov
Keyword(s):  
Solid State ◽  
Quantum Wells ◽  
Resonant Tunneling ◽  
Magnetic Films ◽  
Resonant Tunneling Diodes ◽  
Exchange Splitting ◽  
Double Barrier ◽  
Molecular Beam Epitaxial ◽  
Tunneling Diodes ◽  
Spin Filtering

Several techniques were proposed to achieve solid state spin filtering such as magnetic tunnel junctions comprised of half-metallic compounds or solid state Stern-Gerlach apparatus. Another alternative consists in using spin-dependent resonant tunneling through magnetically active quantum wells. Recent advances in molecular beam epitaxial growth made it possible to fabricate exotic heterostructures comprised of magnetic films or buried layers (ErAs, GaxMn1-xAs) integrated with conventional semiconductors (GaAs) and to explore quantum transport in these heterostructures. It is particularly interesting to study spin-dependent resonant tunneling in double-barrier resonant tunneling diodes (RTD) with magnetic elements such as GaAs/AlAs/ErAs/AlAs/ErAs/AlAs/GaAs, GaxMn1-xAs/AlAs/GaAs/AlAs/GaAs, and GaAs/AlAs/GaxMn1-xAs/AlAs/GaAs. We present the results of our theoretical studies and computer simulations of transmission coefficients and current-voltage characteristics of resonant tunneling diodes based on these double-barrier structures. Resonant tunneling of holes (GaxMn1-xAs-based RTDs) is considered. Our approach is based on k·p perturbation theory with exchange splitting effects taken into account. We analyze exchange splitting of different resonant channels as a function of magnetization as well as spin polarization of the transmitted current as a function of bias. We found that resonant tunneling I – V characteristics of the double-barrier magnetic hererostructures strongly depend on the doping level in the emitter as well as on the orientation of the magnetization.

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