Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

2005 ◽  
Vol 26 (1-4) ◽  
pp. 129-132 ◽  
Author(s):  
H.Y. Liu ◽  
T.J. Badcock ◽  
I.R. Sellers ◽  
W.M. Soong ◽  
K.M. Groom ◽  
...  
Keyword(s):  
Growth Temperature ◽  
High Growth ◽  
Photoluminescence Intensity ◽  
High Growth Temperature ◽  
Enhanced Photoluminescence ◽  
Spacer Layer

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

2004 ◽  
Vol 85 (5) ◽  
pp. 704-706 ◽  
Author(s):  
H. Y. Liu ◽  
I. R. Sellers ◽  
T. J. Badcock ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Growth Temperature ◽  
High Growth ◽  
Quantum Dot Lasers ◽  
High Growth Temperature ◽  
Spacer Layer ◽  
Improved Performance ◽  
Inas Quantum Dot

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

2012 ◽  
Vol 111 (4) ◽  
pp. 046101 ◽  
Author(s):  
F. K. Tutu ◽  
I. R. Sellers ◽  
M. G. Peinado ◽  
C. E. Pastore ◽  
S. M. Willis ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Growth Temperature ◽  
High Growth ◽  
High Growth Temperature ◽  
Quantum Dot Solar Cells ◽  
Spacer Layer ◽  
Improved Performance ◽  
Gaas Quantum Dot

Filling of Deep Trench by Epitaxial SiC Growth

2013 ◽  
Vol 740-742 ◽  
pp. 793-796 ◽  
Author(s):  
K. Kojima ◽  
A. Nagata ◽  
S. Ito ◽  
Y. Sakuma ◽  
R. Kosugi ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Void Formation ◽  
High Growth ◽  
Deep Trench ◽  
High Growth Temperature ◽  
Trench Structure ◽  
Filling Mechanism ◽  
Trench Width

We performed deep trench filling by using epitaxial SiC growth. It was found that the trench filling condition depend on trench width. A high growth temperature was needed to fill a narrow trench and a low growth temperature was needed to fill a wide trench structure. We optimized the filling condition and successfully filled 7μ m deep and 2 μm wide trench without void formation. We also investigated the 2D doping distribution of the filled area by SSRM. As a result, it is found that the existence of a sub-trench was related to the generation of a doping distribution in the filled area. The trench filling mechanism and doping distribution are discussed.

Formation of Mn-As Centers in In1-xMnxAs Diluted Magnetic Semiconductors

1992 ◽  
Vol 290 ◽  
Author(s):  
A. Krol ◽  
Y. L. Soo ◽  
Z. H. Ming ◽  
Y. H. Kao ◽  
H. Munekata ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Growth Temperature ◽  
Local Structure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
High Growth ◽  
High Growth Temperature ◽  
Diluted Magnetic ◽  
Substrate Temperatures

AbstractXAFS spectra at the Mn K-edge were obtained for films of In1-xMnxAs (0.0014 ≤x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts, = 200–210 °C and Ts, = 280–300 ° C. It has been found that Mn-As complexes which consist of a central Mn atom surrounded by six neighboring As most likely arranged in the form of a distorted trigonal antiprism with one or two additional Mn atoms placed on the long axis of the antiprism, can substitute for the In-As tetrahedron in the undistorted zincblende structure. For a composition of x = 0.12 we have found the formation of MnAs clusters with NiAs-like structure in the high-growth-temperature samples. We thus conclude that the magnetic properties of the In1-xMnx As semiconductors are mainly determined by the formation and local structure ol'the Mn-As complexes.

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