Formation of Mn-As Centers in In1-xMnxAs Diluted Magnetic Semiconductors

1992 ◽  
Vol 290 ◽  
Author(s):  
A. Krol ◽  
Y. L. Soo ◽  
Z. H. Ming ◽  
Y. H. Kao ◽  
H. Munekata ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Growth Temperature ◽  
Local Structure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
High Growth ◽  
High Growth Temperature ◽  
Diluted Magnetic ◽  
Substrate Temperatures

AbstractXAFS spectra at the Mn K-edge were obtained for films of In1-xMnxAs (0.0014 ≤x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts, = 200–210 °C and Ts, = 280–300 ° C. It has been found that Mn-As complexes which consist of a central Mn atom surrounded by six neighboring As most likely arranged in the form of a distorted trigonal antiprism with one or two additional Mn atoms placed on the long axis of the antiprism, can substitute for the In-As tetrahedron in the undistorted zincblende structure. For a composition of x = 0.12 we have found the formation of MnAs clusters with NiAs-like structure in the high-growth-temperature samples. We thus conclude that the magnetic properties of the In1-xMnx As semiconductors are mainly determined by the formation and local structure ol'the Mn-As complexes.

THE MAGNETIC PROPERTIES OF II-VI GROUP Fe-TYPE DILUTED MAGNETIC SEMICONDUCTORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic

Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In2O3 Diluted Magnetic Semiconductors

2008 ◽  
Vol 1119 ◽  
Author(s):  
A Ghosh ◽  
R K Gupta ◽  
P K Kahol ◽  
K Ghosh
Keyword(s):  
Transport Properties ◽  
Growth Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diluted Magnetic ◽  
Co Doped

AbstractThin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on structural, electrical, and magneto-transport properties of these films. Crystalinity of the films increases with the growth temperature. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature behave more like to nanocrystaline. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity and magnetoresistance of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystalinity of the films.

Novel Room-temperature Ferromagnetic Semiconductors Pb1-x-yCaxCryTe

2009 ◽  
Vol 1183 ◽  
Author(s):  
Evgeny P. Skipetrov ◽  
Elena A. Zvereva ◽  
Nikolay A. Pichugin ◽  
Alexey E. Primenko ◽  
Evgeny I. Slyn'ko ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Impurity Level ◽  
Ferromagnetic Semiconductors ◽  
Magnetization Curves ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

Abstract The galvanomagnetic and magnetic properties of novel diluted magnetic semiconductors Pb1-x-yCaxCryTe (x=0.06-0.20, y=0.003-0.045) have been investigated. Temperature dependencies of the resistivity and the Hall coefficient have a metallic character indicating the pinning of Fermi level by the chromium impurity level on the background of the conduction band states. Magnetization curves display a clear hysteresis loop over the whole temperature range investigated. The Curie temperature, determined from the temperature dependencies of magnetization, achieves 345 K. Possible mechanisms of ferromagnetic ordering were discussed.

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