Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films

2017 ◽  
Vol 214 (10) ◽  
pp. 1700210 ◽  
Author(s):  
Peter Schlupp ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Schottky Barrier ◽  
Tin Oxide ◽  
Room Temperature ◽  
Schottky Barrier Diodes ◽  
Oxide Thin Films ◽  
Zinc Tin Oxide

scholarly journals Microscopic and chemical analysis of room temperature UV laser annealing of solution-based zinc-tin-oxide thin films

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Ji-Hwan Kwon ◽  
Seunghoon Jang ◽  
Hyuk Jin Kim ◽  
Beom Soo Joo ◽  
Kwang Nam Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Analysis ◽  
Tin Oxide ◽  
Room Temperature ◽  
Laser Annealing ◽  
Uv Laser ◽  
Oxide Thin Films ◽  
Zinc Tin Oxide

MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

2018 ◽  
Vol 113 (13) ◽  
pp. 133501 ◽  
Author(s):  
Sofie Vogt ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Zinc Tin Oxide

Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature

2014 ◽  
Vol 1633 ◽  
pp. 101-104 ◽  
Author(s):  
P. Schlupp ◽  
H. von Wenckstern ◽  
M. Grundmann
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Amorphous Materials ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Growth Pressure ◽  
Zinc Tin Oxide

ABSTRACTFor a cost-efficient fabrication of homogeneous oxide thin films the usage of amorphous materials is favorable. They can be deposited at room temperature (RT) and represent an interesting alternative to amorphous silicon in electronics. Zinc-tin oxide is a promising n-type channel material for thin film transistors and consists of abundant elements, only, in contrast to the well-explored indium gallium zinc oxide. Here, the electrical and optical properties of room temperature deposited ZTO thin films are discussed. These films were fabricated via pulsed-laser deposition on glass substrates by ablating a ceramic target composed of ZnO and SnO2 in a 1:2 ratio. The resistivity has been controlled over seven orders of magnitude via the oxygen growth pressure. Further, the optical transmittance tends to be higher for higher oxygen growth pressures.

scholarly journals X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

2014 ◽  
Vol 104 (24) ◽  
pp. 242113 ◽  
Author(s):  
Sin Cheng Siah ◽  
Sang Woon Lee ◽  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Tomohiro Shibata ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Tin Oxide ◽  
Electron Mobility ◽  
Structural Disorder ◽  
Oxide Thin Films ◽  
X Ray ◽  
Zinc Tin Oxide ◽  
The Impact ◽  
X Ray Absorption

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors

2018 ◽  
Vol 18 (7) ◽  
pp. 4930-4934 ◽  
Author(s):  
Tien-Hung Cheng ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Oxide Thin Films ◽  
Zinc Tin Oxide

scholarly journals Tailoring of the Structural and Optoelectronic Properties of Zinc-Tin-Oxide Thin Films via Oxygenation Process for Solar Cell Application

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 193560-193568
Author(s):  
Mohammad Aminul Islam ◽  
Md. Khan Sobayel Bin Rafiq ◽  
Halina Misran ◽  
Md. Akhtar Uzzaman ◽  
Kuaanan Techato ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Tin Oxide ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Solar Cell Application ◽  
Zinc Tin Oxide ◽  
Structural And Optoelectronic Properties
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