Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems

2020 ◽  
Vol 597 ◽  
pp. 412403 ◽  
Author(s):  
Hassen Dakhlaoui ◽  
Mouna Nefzi ◽  
Najla S. Al-Shameri ◽  
Alanoud Al Suwaidan ◽  
Hadeel Elmobkey ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

Spin Polarized Transport through Structures Consist of the Ferromagnetic Semiconductor in Presence of a Inhomogeneous Magnetic Field

2011 ◽  
Vol 194-196 ◽  
pp. 679-682
Author(s):  
Zahra Bamshad
Keyword(s):  
Magnetic Field ◽  
Spin Polarization ◽  
Fermi Energy ◽  
Magnetic Tunnel Junction ◽  
Inhomogeneous Magnetic Field ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Dimensional Electron Gas ◽  
Spin Electronic ◽  
Spin Polarized Transport

The spin-polarized transport is investigated in a magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer placed in distance above the two dimensional electron gas (2DEG) in presence of an inhomogeneous external modulated magnetic field and a perpendicular wave vector dependent effective potential. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the conductance and spin polarization on the Fermi energy of the electrons are studied theoretically the. strong oscillations with large amplitude investigated in spin polarization in terms of the Fermi energy due to the inhomogeneous magnetic field. The conductance in terms of the Fermi energy shows no oscillation in low energy but has a strong pick in middle region. this results may be useful for the development of spin electronic devices based on coherent transport, or may be used as a tunable spin-filter.

Field effect on spin-polarized transport in graphene nanoribbons

2008 ◽  
Vol 92 (16) ◽  
pp. 163109 ◽  
Author(s):  
Jing Guo ◽  
D. Gunlycke ◽  
C. T. White
Keyword(s):  
Field Effect ◽  
Graphene Nanoribbons ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

Studies of spin related processes in fullerene C60 devices

2018 ◽  
Vol 6 (14) ◽  
pp. 3621-3627 ◽  
Author(s):  
Haoliang Liu ◽  
Jingying Wang ◽  
Matthew Groesbeck ◽  
Xin Pan ◽  
Chuang Zhang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Spin Current ◽  
Fullerene C60 ◽  
Spin Valves ◽  
Pure Spin ◽  
Carrier Injection ◽  
Current Generation ◽  
Spin Polarized

We have investigated spin related processes in fullerene C60 devices using a several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices.

Organic field-effect transistors for spin-polarized transport

2008 ◽  
Vol 205 (3) ◽  
pp. 656-663 ◽  
Author(s):  
M. Michelfeit ◽  
G. Schmidt ◽  
J. Geurts ◽  
L. W. Molenkamp
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

The Model for Calculation the Hall Effect Parameter

2004 ◽  
Vol 9 (2) ◽  
pp. 129-138
Author(s):  
J. Kleiza ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Mapping Method ◽  
Sample Thickness ◽  
System Of Nonlinear Equations ◽  
Specific Resistivity ◽  
Conformal Mapping Method ◽  
Effect Parameter ◽  
The Magnetic Field

A method for calculating the values of specific resistivity ρ as well as the product µHB of the Hall mobility and magnetic induction on a conductive sample of an arbitrary geometric configuration with two arbitrary fitted current electrodes of nonzero length and has been proposed an grounded. During the experiment, under the constant value U of voltage and in the absence of the magnetic field effect (B = 0) on the sample, the current intensities I(0), IE(0) are measured as well as the mentioned parameters under the effect of magnetic fields B1, B2 (B1 ≠ B2), i.e.: IE(β(i)), I(β(i)), i = 1, 2. It has been proved that under the constant difference of potentials U and sample thickness d, the parameters I(0), IE(0) and IE(β(i)), I(β(i)), i = 1, 2 uniquely determines the values of the product µHB and specific resistivity ρ of the sample. Basing on the conformal mapping method and Hall’s tensor properties, a relation (a system of nonlinear equations) between the above mentioned quantities has been found.

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