Studies of spin related processes in fullerene C60 devices

2018 ◽  
Vol 6 (14) ◽  
pp. 3621-3627 ◽  
Author(s):  
Haoliang Liu ◽  
Jingying Wang ◽  
Matthew Groesbeck ◽  
Xin Pan ◽  
Chuang Zhang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Spin Current ◽  
Fullerene C60 ◽  
Spin Valves ◽  
Pure Spin ◽  
Carrier Injection ◽  
Current Generation ◽  
Spin Polarized

We have investigated spin related processes in fullerene C60 devices using a several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices.

Magnetic field effect on spin-polarized transport in asymmetric multibarrier based on InAs/GaAs/GaSb systems

2020 ◽  
Vol 597 ◽  
pp. 412403 ◽  
Author(s):  
Hassen Dakhlaoui ◽  
Mouna Nefzi ◽  
Najla S. Al-Shameri ◽  
Alanoud Al Suwaidan ◽  
Hadeel Elmobkey ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

The Model for Calculation the Hall Effect Parameter

2004 ◽  
Vol 9 (2) ◽  
pp. 129-138
Author(s):  
J. Kleiza ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Mapping Method ◽  
Sample Thickness ◽  
System Of Nonlinear Equations ◽  
Specific Resistivity ◽  
Conformal Mapping Method ◽  
Effect Parameter ◽  
The Magnetic Field

A method for calculating the values of specific resistivity ρ as well as the product µHB of the Hall mobility and magnetic induction on a conductive sample of an arbitrary geometric configuration with two arbitrary fitted current electrodes of nonzero length and has been proposed an grounded. During the experiment, under the constant value U of voltage and in the absence of the magnetic field effect (B = 0) on the sample, the current intensities I(0), IE(0) are measured as well as the mentioned parameters under the effect of magnetic fields B1, B2 (B1 ≠ B2), i.e.: IE(β(i)), I(β(i)), i = 1, 2. It has been proved that under the constant difference of potentials U and sample thickness d, the parameters I(0), IE(0) and IE(β(i)), I(β(i)), i = 1, 2 uniquely determines the values of the product µHB and specific resistivity ρ of the sample. Basing on the conformal mapping method and Hall’s tensor properties, a relation (a system of nonlinear equations) between the above mentioned quantities has been found.

Magnetic field effect on the electrodeposition of ZnSe

2015 ◽  
Vol 51 (2) ◽  
pp. 345-352 ◽  
Author(s):  
R. Kowalik ◽  
K. Mech ◽  
D. Kutyla ◽  
T. Tokarski ◽  
P. Zabinski
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect

The magnetic field effect on heat-exchange characteristics and MHD resistance of lead-bismuth eutectic flow in the TOKAMAK blanket heat-sink systems

2013 ◽  
Vol 49 (1-2) ◽  
pp. 237-248
Author(s):  
A. V. Beznosov ◽  
O. O. Novozhilova ◽  
S. Yu. Savinov ◽  
M. V. Yarmonov ◽  
R. E. Alekseev
Keyword(s):  
Magnetic Field ◽  
Heat Exchange ◽  
Heat Sink ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Lead Bismuth Eutectic ◽  
The Magnetic Field
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