Enhanced performance and reduction in operating voltage of TiO2 thin film based resistive switching memory under optical stimulus

2020 ◽  
Vol 595 ◽  
pp. 412339
Author(s):  
Kiran D. More ◽  
Vijaykiran N. Narwade ◽  
Devidas I. Halge ◽  
Jagdish W. Dadge ◽  
Kashinath A. Bogle
2020 ◽  
Vol 12 (48) ◽  
pp. 54168-54173
Author(s):  
Hang-Lv Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  

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Vol 8 (1) ◽  
pp. 483 ◽  
Author(s):  
Hsin-Wei Huang ◽  
Chen-Fang Kang ◽  
Fang-I Lai ◽  
Jr-Hau He ◽  
Su-Jien Lin ◽  
...  

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Jiaying Jian ◽  
Hao Feng ◽  
Pengfan Dong ◽  
Honglong Chang ◽  
Arnaud Vena ◽  
...  

2013 ◽  
Vol 102 (24) ◽  
pp. 243501 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Changshan Hao ◽  
Shiliu Yin ◽  
Ming Li ◽  
Haiqian Wang

2014 ◽  
Vol 105 (12) ◽  
pp. 123506 ◽  
Author(s):  
Keisuke Kado ◽  
Mutsunori Uenuma ◽  
Kriti Sharma ◽  
Haruka Yamazaki ◽  
Satoshi Urakawa ◽  
...  

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Vol 102 (6) ◽  
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Yang-Shun Fan ◽  
Po-Tsun Liu

RSC Advances ◽  
2017 ◽  
Vol 7 (34) ◽  
pp. 21045-21049 ◽  
Author(s):  
Myung-Joo Park ◽  
Jang-Sik Lee

A flexible resistive switching memory device based on ZIF-8 is fabricated using a dip coating method. The device shows reliable resistive switching with mechanical stability.


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